Труды XXII Международного симпозиума «Нанофизика и Наноэлектроника» 2018 г., Нижний Новгород
Semiconductor nanostructures: electronic, optical properties, formation methods
An original method has been developed for nanotexturing the surface of crystalline silicon, based on the use of GeSi self-focusing nanoislands as a mask for anisotropic etching of Si. The developed method is characterized by a small thickness of the removed silicon and allows in a wide spectral range to significantly reduce the reflection from the silicon surface and increase the absorption of radiation in the near and middle IR range. This makes it promising to use this method of surface nanotexturing to increase the efficiency of solar cells based on thin crystalline silicon wafers
In the work, tunnel contacts for terahertz frequency range devices were considered. Based on quantum model of electron transport, the design of heterostructures was calculated
This work presents the results of the formation of Ge stretched microstructures based on Ge layers grown by MBE on Si (001) and SOI substrates, and the study of their radiative properties. Free-hanging Ge microbridges were obtained by optical lithography, plasma-chemical and selective chemical etching. Measurements of local strain by Raman microscopy showed an increase in tensile strain in Ge microbridges up to 3%. The micro-PL spectroscopy method has demonstrated a significant increase in intensity and a significant modification of the PL spectrum in the region of maximum tensile stresses in Ge microbridges and their surroundings compared with weakly stretched sections of the initial Ge layers.