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Резонансные туннельные контакты для гетероструктур AlAs/GaAs с пролётными эффектами

С. 648–649.
Козлов В. А., Павельев Д. Г., Verbus V. A., Оболенский С. В., Оболенская Е. С.

In the work, tunnel contacts for terahertz frequency range devices were considered. Based on quantum model of electron transport, the design of heterostructures was calculated

Language: Russian
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Keywords: tunnel contactтуннельный контакт

In book

Труды XXII Международного симпозиума «Нанофизика и Наноэлектроника» 2018 г., Нижний Новгород
Труды XXII Международного симпозиума «Нанофизика и Наноэлектроника» 2018 г., Нижний Новгород
Т. 2: секция 3. , Н. Новгород: Нижегородский государственный университет им. Н.И. Лобачевского, 2018.
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