Формирование и исследование локально растянутых Ge микроструктур для кремниевой фотоники

С. 837–838.

Яблонский А. Н., Вдовичев С. Н., Verbus V. A., Володин Н. С., Гусев Н. С., Кудрявцев К. Е., Машин А. И., Морозова Е. Е., Нежданов А. В., Новиков А. В., Скороходов Е. Е., Юрасов Д. В.

This work presents the results of the formation of Ge stretched microstructures based on Ge layers grown by MBE on Si (001) and SOI substrates, and the study of their radiative properties. Free-hanging Ge microbridges were obtained by optical lithography, plasma-chemical and selective chemical etching. Measurements of local strain by Raman microscopy showed an increase in tensile strain in Ge microbridges up to 3%. The micro-PL spectroscopy method has demonstrated a significant increase in intensity and a significant modification of the PL spectrum in the region of maximum tensile stresses in Ge microbridges and their surroundings compared with weakly stretched sections of the initial Ge layers.

Keywords: Ge microbridges, local strain, Ge микромостики, локальная деформация

In book

Труды XXII Международного симпозиума «Нанофизика и Наноэлектроника» 2018 г., Нижний Новгород

Т. 2: секция 3. , Н. Новгород: Нижегородский государственный университет им. Н.И. Лобачевского, 2018.