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Surface plasmon wave propagation length measurement at a telecom wavelength
Laser Physics Letters. 2020. Vol. 17. No. 4. P. 045901.
Kalmykov A., Melentiev P., Balykin V.
In this paper we present measurements and comparison of SPP propagation length at the practically important telecom wavelength (1560 nm) as well as in the near-infrared and visible spectral ranges. The measurements were carried out for plane SPP waves excited on Ag film surface using optical microscopy of SPP waves in the far field. We also demonstrate the possibility of visualization of a SPP waves propagation using multiphoton induced photoluminescence in silver.
Priority areas:
engineering science
Language:
English
Ignatyeva D., Kapralov P., Golovko P. et al., Sensors 2021 Vol. 21 No. 6 Article 1984
We propose an all-dielectric magneto-photonic crystal with a hybrid magneto-optical
response that allows for the simultaneous measurements of the surface and bulk refractive index of
the analyzed substance. The approach is based on two different spectral features of the magnetooptical
response corresponding to the resonances in p- and s-polarizations of the incident light.
Angular spectra of p-polarized light have ...
Added: March 13, 2021
Romshin A. M., Gritsienko A. V., Lega P. V. et al., Laser Physics Letters 2023 Vol. 20 No. 1 Article 015206
Solid-state photon emitters at room temperature appear to be promising candidates for a variety of nanophotonic applications. In this regard, coupling photon emitters with various optical cavities providing pronounced directivity, high photoexcitation and emission rates is extremely desirable. Here, we introduce the novel concept of deterministically coupling color centers in nanodiamonds (NDs) with gold nanopits. ...
Added: January 9, 2023
Мелентьев П. Н., Кузин А. А., Gritchenko A. S. et al., Optics Communications 2017 Vol. 393 No. 15 P. 509-513
We have realized a plasmonic interferometer formed by a nanoslit and a nanogroove in a single-crystal gold film. The possibility of measuring laser pulses of ultimately short durations, corresponding to two periods of a light wave (6 fs pulse duration), has been demonstrated using this interferometer. ...
Added: February 4, 2019
Zhukov A., Applied Physics B: Lasers and Optics 2018 Vol. 124 No. 2 Article 21
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, ...
Added: March 16, 2021
Kryzhanovskaya N., Zhukov A., Maximov M. et al., IEEE Journal on Selected Topics in Quantum Electronics 2015 Vol. 21 No. 6 P. 709-713
Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 μm were studied under optical pumping. The disks were fabricated with standard photolithography and two-step wet etching. We demonstrate room temperature lasing in the 1.29-1.32-μm wavelength range (ground-state transition) in microlasers as small as 1 μm in diameter. The microlasers demonstrate ...
Added: September 30, 2020
M. : Association of graduates and employees of AFEA named after prof. Zhukovsky, 2018
The materials of The International Scientific – Practical Conference is presented below.
The Conference reflects the modern state of innovation in education, science, industry and social-economic sphere, from the standpoint of introducing new information technologies.
It is interesting for a wide range of researchers, teachers, graduate students and professionals in the field of innovation and information technologies. ...
Added: May 24, 2018
Gridchin V., Kotlyar K., Reznik R. et al., Nanotechnology 2021 Vol. 32 No. 33 Article 335604
InGaN nanostructures are among the most promising candidates for visible solid-state lighting
and renewable energy sources. To date, there is still a lack of information about the influence of
the growth conditions on the physical properties of these nanostructures. Here, we extend the
study of InGaN nanowires growth directly on Si substrates by plasma-assisted molecular beam
epitaxy. The results ...
Added: August 30, 2021
Малеев Н. А., Васильев А. П., Кузьменков А. Г. et al., Письма в Журнал технической физики 2019 Т. 45 № 21 С. 29-33
High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse ...
Added: December 8, 2020
Budkov Y., М. : ЛЕНАНД, 2020
Within the presented monograph for the first time statistical approaches, based on the self-consistent field theory, were presented for the theoretical description of the thermodynamic properties of the ion-molecular systems (electrolyte solutions, ionic liquids, dielectric polymers and metal-organic frameworks) in the bulk solution and at the interfaces with the account for their molecular structure. In ...
Added: November 18, 2019
ФГБНУ "НИИ ПМТ", 2019
Труды содержат представленные на конференцию доклады из вузовских, академических и отраслевых организаций России и стран СНГ (Армении, Азербайджана, Белоруссии, Казахстана, Узбекистана). В опубликованных докладах содержатся новые результаты исследований процессов образования, миграции и эволюции радиационных дефектов в твердых телах, радиационно-технологических методов модифицирования и обработки материалов с целью улучшения их эксплуатационных свойств, эффектов радиационно-стимулированной диффузии, радиационно-индуцированной сегрегации ...
Added: August 16, 2019
Бобров М. А., Блохин А. А., Кузьменков А. Г. et al., Оптика и спектроскопия 2019 Т. 127 № 7 С. 145-149
The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained InGaAs/InAlGaAs quantum wells have been presented. It has been shown that the proposed design ...
Added: December 9, 2020
Kryzhanovskaya N., Zhukov A., Moiseev E. et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for
creating compact, energy-efficient light sources (microlasers) for various applications owing to
their small footprints, high Q factors, planar geometry, in-plane light emission, and high
sensitivity to the environment. In this review we present the most recent advances in III–V
microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators
and discuss ...
Added: September 3, 2021
Elsevier, 2018
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in ...
Added: February 19, 2021
Boldyrev K., Маврин Б. Н., Шерин П. С. et al., Journal of Luminescence 2018 Vol. 193 P. 119-124
We report on the quantum yield (eta) and decay time (tau) measurements at room temperature for the bright red-orange (602 nm) luminescence from new germanium-vacancy (Ge-V) centers in nano- and microcrystalline diamonds synthesized at high pressure and high temperature. The values eta = 3 +/- 1% and tau = 6.2 +/- 0.2 ns were found. ...
Added: February 8, 2019
Novikov I., Nadtochiy A., Potapov A. Y. et al., Journal of Luminescence 2021 Vol. 239 Article 118393
The temperature dependencies of photoluminescence efficiency of InGaAlAs/InGaAs/InP heterostructures with
1550 nm range strained quantum wells have been studied. The heterostructures had nine In0.74Ga0.26As quantum
wells which were separated by In0.53Al0.20Ga0.27As barriers. The barriers were δ-doped with n- and p-type
dopants with different layer concentrations of charge carriers. The both p-type and n-type doping of barriers
leads to slight ...
Added: August 30, 2021
Kryzhanovskaya N., Maximov M., Zhukov A. et al., Journal of Lightwave Technology 2015 Vol. 33 No. 1 P. 171-175
A dense array of InGaAs quantum dots formed by MOCVD on a misoriented GaAs substrate has been used as an active medium of microdisk resonators of various types: a cylindrical disk, an undercut disk, and a suspended disk. Single-mode room temperature lasing in a 9-μm microdisk laser is demonstrated with a dominant line around 1.13 ...
Added: September 30, 2020
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
Duarte E. C., Sardella E., Teixeira Saraiva T. et al., / Cornell University. Series cond-mat "arxiv.org". 2022. No. 2209.
The presence of magnetic fields and/or transport currents can cause penetration of vortices in superconductors. Their motion leads to dissipation and resistive state arises, which in turn strongly affects the performance of superconducting devices such as single-photon and single-electron detectors. Therefore, an understanding of the dissipation mechanisms in mesoscopic superconductors is not only of fundamental ...
Added: November 7, 2022
Свинарев Ф. Б., Балашова Е. В., Кричевцов Б. Б. et al., Journal of Physics: Conference Series 2018 Vol. 1038 P. 012117
The polarization switching was studied in single crystals and thin films of 2- methylbenzimidazole (MBI) obtained by evaporation method from an MBI ethanol solution. Dielectric hysteresis loops were measured in the temperature interval 290-390 K and frequency range 20-1000 Hz for different amplitudes of the electric field. The Kolmogorov β-model with account of Mertz law ...
Added: November 10, 2020
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 16 С. 3-6
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, ...
Added: August 25, 2020
Verbus V. A., Novikov A. V., Yurasov D. V. et al., Semiconductors 2018 Vol. 52 No. 11 P. 1442-1447
The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the ...
Added: December 26, 2018
Балашова Е. В., Свинарев Ф. Б., Левин А. А. et al., Crystals 2019 Vol. 9 No. 11 P. 573
New single crystals, based on 2-methylbenzimidazole (MBI), of MBI-phosphite (C16H24N4O7P2), MBI-phosphate-1 (C16H24N4O9P2), and MBI-phosphate-2 (C8H16N2O9P2) were obtained by slow evaporation method from a mixture of alcohol solution of MBI crystals and water solution of phosphorous or phosphoric acids. Crystal structures and chemical compositions were determined by single crystal X-ray diffraction (XRD) analysis and confirmed by ...
Added: November 10, 2020
Boldyrev K., Романов А., Хаула Е. et al., Journal of the American Ceramic Society 2019 Vol. 102 No. 5 P. 2745-2751
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does ...
Added: February 8, 2019
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., IEEE Journal of Quantum Electronics 2020 Vol. 56 No. 5 P. 1-8
We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical power limited by the thermal rollover effect, the corresponding injection current and excess temperature of the device. The ...
Added: July 30, 2020