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Мощность насыщения оптического усилителя на основе самоорганизующихся квантовых точек

Жуков А. Е., Крыжановская Н. В., Моисеев Э. И., Надточий А. М., Зубов Ф. И., Максимов М. В., Гордеев Н.

Gain saturation in a semiconductor optical amplifier
with an array of quantum dots was studied analytically and by
numerical simulation on the basis of an analysis of the rate
equations. It is shown that, at a moderate injection level, the
saturation power increases in proportion to the current density, and
then reaches its maximum value, limited by the rate of capture of
charge carriers to the ground state and by the number of quantum
dots interacting with photons. Expressions are proposed that allow
an explicit description of the dependence of the saturation power
on the current and its relationship with the internal parameters of
the active region.