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September 7, 2026
Biologists Discover 'Molecular Fingerprint' of Preeclampsia
Researchers at HSE University employed a new method to model hypoxia in placental cells during pregnancies complicated by preeclampsia and identified molecular markers of tissue hypoxia. Since hypoxia is one of the key mechanisms underlying preeclampsia, these findings are important for a more accurate and timely diagnosis of the disease and for the development of effective treatment methods. The paper has been published in Placenta.
September 7, 2026
‘Speech, Facial Expressions, and Gestures Cannot Lie
Would you like to know whether a speaker’s trembling voice or an accidental gesture can give them away? At HSE University in Nizhny Novgorod, researchers are developing an algorithm that analyses speech, facial expressions, and gestures, and determines whether information is truthful with 92% accuracy. The project has applications ranging from forensic examination and bank recruitment to fundamental research. Anna Khomenko, head of the research group and Senior Research Fellow at the Centre for Language and Brain at the HSE Faculty of Humanities in Nizhny Novgorod, explains how students and researchers are working together to create a corpus of video recordings, train a classifier, and prepare to introduce computer vision technology.
September 4, 2026
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Исследование высокотемпературной генерации микродисковых лазеров с оптически связанным волноводом

Оптика и спектроскопия. 2023. Т. 131. № 11. С. 1483–1485.
Fominykh N., Kryzhanovskaya N., Ivanov K., Komarov S., Moiseev E., Nadtochiy A., Гусева Ю. А., Кулагина М. М., Минтаиров С. А., Калюжный Н. А., Хабибуллин Р. А., Галиев Р. Р., Павлов А. Ю., Томош К. Н., Makhov I., Максимов М. В., Zhukov A.
Research target: Physics Nanotechnologies
Language: Russian
Full text
DOI
Text on another site
Keywords: волноводыквантовые точкиquantum dotswaveguidesмикролазерыmicrolasers
Publication based on the results of:
Creation and investigation of semiconductor micro- and nanolasers for photonic integrated circuits (2024)
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Using self-consistent Bogoliubov-de Gennes calculations for kagome flakes framed by armchair and flat edges, we observe a configuration-dependent spatial inhomogeneity of an 𝑠-wave superconducting condensate. Specifically, at half-filling, the local pair potential is significantly enhanced by up to 77.8% at edge centers and up to 148.9% at corners, subsequently boosting their local critical temperatures by up to 13.5% and ...
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Interband effects in the intertype regime of dirty two-band superconductors
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We investigate the effect of weak interband impurity scattering on the intertype (IT) domain between type-I and type-II superconductivity in diffusive two-band superconductors. Our results show that the significant broadening of the IT domain with increasing band diffusivity ratio, previously established in the absence of interband scattering, persists under weak interband scattering. However, depending on ...
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Элементы теории топологических изоляторов
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В учебном пособии излагаются элементы теории и описание избранных экспериментальных результатов, полученных в активно развивающейся физике топологических изоляторов. Рассмотрены наиболее простые модели поверхностных и краевых состояний в двумерных и трёхмерных топологических изоляторах, их структура в магнитном поле, а также основы топологических методов для определения их свойств. Обсуждаются модели квантовых точек, формируемых в топологических изоляторах. Приведены ...
Added: September 6, 2026
Импульсное лазерное облучение светоизлучающих структур со слоем (Ga,Mn)As
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Сочетанием методов МОС-гидридной эпитаксии и импульсного лазерного нанесения изготовлены гетеронаноструктуры InGaAs/GaAs со слоем (Ga, Mn)As на поверхности, и исследовано влияние воздействия импульсного эксимерного лазера (длина волны 248 nm, длительность импульса ~30 ns, плотность энергии в диапазоне 200-360 mJ/cm2) на их излучательные, структурные и гальваномагнитные свойства. При исследованиях использовалась спектроскопия фотолюминесценции, дополненная возможностью анализа поляризационных характеристик ...
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Воздействие импульсов эксимерного лазера на светоизлучающие InGaAs/GaAs-структуры с (Ga, Mn)As-слоем
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Исследована возможность модифицирования лазерным отжигом свойств слоя (Ga, Mn)As, расположенного на поверхности квантово-размерной InGaAs/GaAs-структуры, с сохранением ее излучательных свойств. Для проведения исследований сочетанием методов МОС-гидридной эпитаксии и импульсного лазерного нанесения были изготовлены структуры с четырьмя квантовыми ямами InGaAs/GaAs, (содержание индия от 0.08 до 0.25), расположенными на различном расстоянии от слоя (Ga, Mn)As. В процессе исследований ...
Added: September 6, 2026
Quasistationary states in a quantum dot formed at the edge of a topological insulator by magnetic barriers with finite transparency
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A model of quasistationary states is constructed for the one-dimensional edge states propagating along the edge of a two-dimensional topological insulator based on HgTe/CdTe quantum well in the presence of magnetic barriers with finite transparency. The lifetimes of these quasistationary states are found analytically and numerically via different approaches including the solution of the stationary ...
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Role of resident electrons in the manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures
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The GaAs/InGaAs quantum wells with a ferromagnetic δ〈Mn〉 layer in GaAs barrier demonstrate a set of interesting spin-related phenomena originating from Mn-hole interaction. One of such phenomena is a spin-memory effect which consists of Mn spin polarization induced by interaction with vicinity spin-polarized holes generated under the exposure by short circularly polarized light pulses. Here long Mn ...
Added: September 6, 2026
Спин-зависимое туннелирование в двойной квантовой точке в режиме "медленной" эволюции
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Исследована динамика туннелирования и спина для дырочных состояний в двойной квантовой точке на основе GaAs при наличии сильного спин-орбитального взаимодействия и периодического электрического поля. Рассмотрены режимы туннелирования с переворотом спина в условиях "медленной" эволюции, при которой частота поля меньше остальных энергетических параметров стационарной части гамильтониана. Обнаружено, что в таких условиях туннелирование с переворотом спина может ...
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Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers
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We have investigated the layers of the (Ga,Mn)As diluted magnetic semiconductor with the thickness in the range of 150 – 400 nm, which have been formed by the combination of the methods of a pulsed laser deposition and a post-growth pulsed laser annealing. It has been found that the laser annealing has a significant effect on the structural, ...
Added: September 6, 2026
Formation of bound states from the edge states of 2D topological insulator by macroscopic magnetic barriers
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A model of bound state formation from the delocalized edge states of 2D topological insulator (TI) is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of 1D quantum dot (QD) with variable number of bound states depending on barrier ...
Added: September 6, 2026
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Single-spin state evolution induced by the Landau-Zener-Stückelberg-Majorana (LZSM) interference in a Zeeman-spit four-level system in a periodically driven double quantum dot is studied theoretically by the Floquet stroboscopic method. An interplay between spin-conserving and spin-flip tunneling processes with the electric dipole spin resonance (EDSR) that is induced in an individual dot and enhanced by the ...
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Разработана модель локализованных состояний в двойной квантовой точке на крае топологического изолятора на основе квантовой ямы HgTe/CdTe, сформированной тремя магнитными барьерами. Исследованы особенности энергетического спектра, плотности вероятности и спиновой плотности квантовых состояний в зависимости от ориентации векторов намагниченности магнитных барьеров. Изучена локализация волновых функций слева и справа от точки антикроссинга в спектре и сделан вывод ...
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Controllable single-spin evolution at subharmonics of electric dipole spin resonance enhanced by four-level Landau-Zener-Stückelberg-Majorana interference
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Subharmonics of electric dipole spin resonance (EDSR) mediated by Landau-Zener-Stückelberg-Majorana tunneling transitions are studied numerically and analytically in a Zeeman-split four-level system with strong spin-orbit coupling that can be realized, for example, in a GaAs-based double quantum dot in a single-hole regime. The spin qubit is formed in one of the dots and the second ...
Added: September 6, 2026
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The development of high-light-yield scintillators based on perovskite quantum dots (PQDs) is hindered by their intrinsic instability and aggregation, which severely limits their long-term operational reliability and integration into polymeric matrices. Silica coating has been demonstrated as an effective strategy to enhance the stability of PQDs. However, achieving fast and uniform silica encapsulation on individual ...
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High-quality planar cavities with low-absorption mirrors based on Al0.2Ga0.8As/Al0.9Ga0.1As layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and the quality-factor at the threshold are 4.2 kW/cm2 and 6800. Increasing the pump level above two thresholds results in an enlargement in the quality-factor to at least 19 ...
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Исследованы инжекционные полупроводниковые микролазеры с кольцевым резонатором радиусом 15 мкм с несимметричным расположением внутреннего отверстия резонатора. Показано, что асимметрия обеспечивает формирование в диаграмме направленности двух лепестков излучения, разориентированных на 50° относительно оси смещения внутреннего отверстия. Измеренная добротность резонаторов сопоставима с добротностью дисковых резонаторов и находится на уровне ∼ 10^6. ...
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Micropillar cavity lasers demonstrate operation up to 255 K. At this temperature, the lasing threshold and Q-factor, extracted at lasing threshold for a 4 μm diameter pillar are about 2 mW and 16800. For pillar lasers, the concept of which is based on an optical aperture, continuous-wave lasing is realized at room temperature (300 K). ...
Added: March 23, 2026
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Advanced micropillar cavities: Room-temperature operation of microlasers
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High-quality micropillar cavities were grown using molecular-beam epitaxy. Stable continuous-wave lasing at room temperature was demonstrated for microlasers with semiconductor and hybrid output mirrors. At 300 K, single-mode lasing was demonstrated for micropillars with a diameter of 5 um at a wavelength of 960 nm, with a minimum lasing threshold of 1.2 mW and the ...
Added: March 13, 2026
Optical properties of disk microresonators based on wide-bandgap III-N materials
S.D. Komarov, Vainilovich A. G., G.A. Feigin et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2025 Vol. 18 No. 3.1 P. 209–213
Fabrication, optical study, and mode modeling of III-N microdisk resonators with InGaN/GaN quantum wells on Al2O3 are presented. It is shown that the created epitaxial structures have high optical quality, and the microresonators support high-Q whispering gallery modes. ...
Added: December 11, 2025
Optical properties of InGaAsN quantum well-based microlasers passivated by SiO2 sol–gel film
Ivan Melnichenko, Shugabaev T., Fominykh N. et al., Optics Letters 2025 Vol. 50 No. 21 P. 6819–6822
Low-temperature, plasma-free method of sol–gel SiO2 passivation coating film was applied to InGaAsN quantum well microlasers emitting in the 1.2 µm spectral range. A marked enhancement in their optical performance under optical pumping and current injection was found. For optically pumped microlasers, room-temperature lasing was achieved along with a substantial increase in photoluminescence intensity. In the case ...
Added: November 12, 2025
Высокочастотная модуляция микрокольцевого лазера с квантовыми точками при повышенной температуре
Zhukov A., Moiseev E., Makhov I. et al., Письма в Журнал технической физики 2025 Т. 51 № 20 С. 32–35
The dynamic characteristics of an InGaAs/GaAs quantum dot microring laser were investigated using small-signal high-frequency current modulation at 55 °C. The maximum modulation bandwidth was 3.7 GHz, and the energy consumption during optical transmission was estimated to be 4.2–6.4 pJ/bit. The temperature dependencies of the parameters affecting the speed of operation (K-factor, threshold current, current ...
Added: October 29, 2025
Phosphorene junctions as a platform for spin-selective quantum dots in next-generation devices
Пеетерс Ф. М., Mahdavifar M., Khoeini F., Journal of Applied Physics 2024 Vol. 136 Article 184301
The impact of vacancies on spin-resolved electronic properties of quantum dots (QDs) in phosphorene-based junctions is investigated numerically. Regardless of the crystal orientation, a phosphorene nanoribbon containing a monovacancy is found to exhibit a topological quasi-flatband that emerges within the bandgap. The electronic properties of QDs, including spatial confinement and energy level distribution, can be ...
Added: September 15, 2025
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