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Dynamic characteristics and noise modelling of directly modulated quantum well-dots microdisk lasers on silicon
Laser Physics Letters. 2022. Vol. 19. No. 2. Article 025801.
Zhukov A., Moiseev E., Nadtochiy A., Makhov I., Ivanov K., Dragunova A., Fominykh N., Shernyakov Y. M., Mintairov S. A., Kalyuzhnyy N. A., Mikushev S. V., Zubov F., Maximov M., Kryzhanovskaya N.
The small-signal amplitude modulation, threshold, and spectral characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots active region were studied jointly with the spectral and threshold parameters of edge-emitting lasers made from the same epitaxial heterostructure. Using the obtained material parameters, the relative intensity noise of the microdisk lasers was calculated as a function of the bias current and side-mode suppression ratio. It is shown that the integral noise is low enough for error-free optical data transmission with the maximum possible bitrate limited by the microdisk modulation bandwidth, if the bias current is above 1.7× threshold current (for side mode suppression ratio > 20 dB).
Zhukov A., Moiseev E., Nadtochiy A. et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active
region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: ...
Added: January 26, 2023
Kryzhanovskaya N., Zubov Fedor I., Moiseev E. et al., Laser Physics Letters 2022 Vol. 19 No. 1 Article 016201
Characteristics of a compact III–V optocoupler heterogeneously integrated on a silicon substrate
and formed by a 31 μm in diameter microdisk (MD) laser with a closely-spaced
50 μm × 200 μm waveguide photodetector are presented. Both optoelectronic devices were
fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers.
The measured dark current density of the photodetector was as ...
Added: December 2, 2021
Makhov I., Ivanov K., Moiseev E. et al., Photonics 2023 Vol. 10 No. 3 Article 235
The two-state lasing phenomenon, which manifests itself in simultaneous laser emission
through several optical transitions of quantum dots, is studied in microdisk diode lasers with
different cavity diameters. The active region represents a multiply stacked array of self-organized
InAs/InGaAs/GaAs quantum dots emitting in the wavelength range of 1.1–1.3 um. Two-state
lasing, which involves the ground-state and the first excited-state ...
Added: April 25, 2023
Kryzhanovskaya N., Zhukov A., Moiseev E. et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for
creating compact, energy-efficient light sources (microlasers) for various applications owing to
their small footprints, high Q factors, planar geometry, in-plane light emission, and high
sensitivity to the environment. In this review we present the most recent advances in III–V
microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators
and discuss ...
Added: September 3, 2021
Makhov I., Ivanov K., Moiseev E. et al., Nanomaterials 2023 Vol. 13 No. 5 Article 877
One-state and two-state lasing is investigated experimentally and through numerical simulation
as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs
quantum dots. Near room temperature, the temperature-induced increment of the ground-state
threshold current density is relatively weak and can be described by a characteristic temperature
of about 150 K. At elevated temperatures, a faster (super-exponential) increase in ...
Added: April 25, 2023
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Moiseev E., Kryzhanovskaya N., Zhukov A. et al., Optics Letters 2018 Vol. 43 No. 19 P. 4554-4557
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential ...
Added: September 27, 2020
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 9 С. 820-825
Gain saturation in a semiconductor optical amplifier
with an array of quantum dots was studied analytically and by
numerical simulation on the basis of an analysis of the rate
equations. It is shown that, at a moderate injection level, the
saturation power increases in proportion to the current density, and
then reaches its maximum value, limited by the rate of ...
Added: October 11, 2021
Зубов Ф. И., Максимов М. В., Moiseev E. et al., Optics Letters 2021 Vol. 46 No. 16 P. 3853-3856
We study the impact of improved heat removal on the performance
of InGaAs/GaAs microdisk lasers epi-side down
bonded onto a silicon substrate. Unlike the initial characteristics
of microlasers on a GaAs substrate, the former’s
bonding results in a decrease in thermal resistance by a factor
of 2.3 (1.8) in microdisks with a diameter of 19 (31) m,
attributed to a thinner ...
Added: August 30, 2021
Makhov I., Бекман А. А., Кулагина М. М. et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40-43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
Зубов Ф. И., Максимов М. В., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Laser Physics Letters 2018 Vol. 15 No. 1 P. 015802
The combination of high operation temperatures and small diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this letter, results are presented for quantum dot III–V-on-Si microdisk diode lasers tested at elevated temperatures. To the best of our knowledge, we have demonstrated the first uncooled microlasers ...
Added: September 29, 2020
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 16 С. 3-6
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, ...
Added: August 25, 2020
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Жуков А. Е., СПб. : ПОЛИТЕХ-ПРЕСС, 2019
Пособие включает в себя учебные материалы по физике и технологии полупроводниковых квантовых точек и лазеров на основе квантовых точек, включая микролазеры. Квантовые точки – это новая разновидность полупроводниковых квантоворазмерных структур (наноструктур), в которых движение носителей заряда ограничено во всех трех направлениях. Возникающая в результате размерного квантования модификация плотности состояний, а также большая энергия локализации носителей ...
Added: February 10, 2020
Zubov F. I., Shernyakov Y. M., Gordeev N. Y. et al., Quantum Electronics 2022 Vol. 52 No. 7 P. 593-596
Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated ...
Added: December 13, 2022
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Khrebtov A. I., Kulagina A. S., Danilov V. V. et al., Journal of Optical Technology (A Translation of Opticheskii Zhurnal) 2022 Vol. 89 No. 5 P. 298-301
Subject of study. The dependence of the photoluminescence of a flexible film structure, which is an array of
InP/InAsP/InP nanowires incorporated into a polymerized trioctylphosphine oxide layer with CdSe/ZnS colloidal
quantum dots, on the intensity of excitation in the near-infrared range at room temperature was investigated
in this study.Method. Nanowires were synthesized on a Si (III) substrate by ...
Added: September 26, 2022
Zhukov A., Applied Physics B: Lasers and Optics 2018 Vol. 124 No. 2 Article 21
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, ...
Added: March 16, 2021
Nadtochiy A., Максимов М. В., Mintairov S. et al., Physica Status Solidi (B): Basic Research 2018 Vol. 255 No. 9 Article 1800123
Dense arrays of carrier localizing indium-rich regions (referred to as quantum
well-dots, QWDs) formed inside an indium-depleted residual quantum well
by metalorganic vapor phase epitaxial deposition of 4–16 monolayers (ML) of
InxGa1xAs (0.3<x<0.5) on 6 misoriented GaAs (100) substrates are
studied. It is shown that in addition to QWDs the deposited layers may
contain other objects with size and shape ...
Added: March 16, 2021
Fominykh N., Kryzhanovskaya N., Ivanov K. et al., Оптика и спектроскопия 2023 Т. 131 № 11 С. 1483-1485
Исследованы характеристики лазерной генерации микродисковых лазеров, сопряженных с оптическим волноводом и работающих в непрерывном режиме при повышенных температурах. Продемонстрированы лазерная генерация и волноводный эффект при температурах вплоть до 92.5 С. Измеренная характеристическая температура микролазеров составила 65 K в диапазоне 25-92.5 С. ...
Added: February 5, 2024