Трехмерное моделирование радиационных токов утечки в субмикронных МОП-транзисторах со структурой кремний-на-изоляторе
A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated.
The future landscape of the micro-nano-electronics will essentially contain extremely miniaturized fully depleted devices such as planar SOI or narrow FinFETs and nanowires. These aspects were covered in both ULIS and EuroSOI conferences, leading to significant overlap. In order to further increase audience and scientific impact, the two sister conferences have decided to merge in 2015.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.