The circuit design of electronic devices for harsh operating conditions requires SPICE models of electronic components that take into account the influence of ultra-low and ultra-high ambient temperatures. However, the standard SPICE models of electronics component, available in commercial versions of SPICE-like simulators, provide an adequate accuracy in a limited temperature range (-60 … +150 °C) and can not be used to calculate the electronic circuits in the ultra-low/high temperature range. This paper presents the modified Low-T and High-T SPICE models of transistors with the MOSFET and JFET structure, designed to calculate the electronic circuits in the temperature range from -200 °C to +300 °C. All models have been built using a universal approach, which consists in adding additional expressions for temperature-dependent parameters to the standard devices SPICE-model. The procedure for extracting the SPICE model parameters, based on the measurement results or TCAD simulation of a standard set of I-V and C-V characteristics in the wide temperature range, has been developed. The error simulation of the I-V characteristics does not exceed 10-12 % in the temperature range from -200 °C to +300 °C.
Aspects of Development and Creation of Cluster Computing Systems Aladyshev O.S., Vdovikin O.I., Ovsyannikov A.P., Opalev V.M., Telegin P.N., Shabanov B.M. The aspects necessary for designing and creating clusters have been considered.
An electro-thermal modeling of modern SiGe and Si bipolar transistor structures using TCAD Sentaurus Synopsys has been carried out. It has been shown that for SiGe heterojunction bipolar transistors, operating at high current density, the internal temperature is higher than for identical Si transistors. As a result a stronger degradation of the device parameters and electrical characteristics is observed.
Computer Network of Inter-Office Supercomputer Center Ovsyannikov A.P., Shabanov B.M., Aladyshev O.S., Opalev V.M., Vdovikin O.I., Zakharchenko A.V. The computer network of the Joint supercomputer center has been considered on an example of the Inter-Department supercomputer network. The issues of organizing a high-speed secure and protected access to computer and information resources have been discussed.
The structure of the RISA GRID segment, that is implemented in the Russian Academy of Sciences and based on the computational clusters of the Joint Supercomputer Center, has been described. The structure and the main points of the components interaction have been discussed. The functioning of the computing systems being a part of GRID has been described. The basic principles of the network environment for distributed computation software design and operation have been presented.
X.500 Directory Server as Kernel of Authentication and Authorization System for Computing Network Shulga N.Yu., Zakharchenko A.V., Aladyshev O.S., Ovsyannikov A.P., Opalev V.M. IT industry grows very rapidly, and the classic administration schemes have become useless be- cause of their complexity. It this paper the authors suppose that usage of the directory services for storage of a user database can be very effective. Also, the integration of the LDAP directory services with different operating systems has been discussed.
The mechanisms of formation of the amplitude value of the electronic component of the total current through BISPIN-device in various modes of pulsation are considered. The results of experimental and theoretical investigations of the electronic component of the current through the structure of the supply voltage and the load resistance are presented. A theoretical model explaining the observed dependencies is offered. The good agreement the calculated and experimental results is received
The voltage-current (VC) and lux-current (LC) room temperature charac-teristics of high-ohmic CdTe (CT) and Cd1-YZnYTe (CZT) samples with vari-ous illumination intensities have been investigated. The dependencies of the short-circuit current and open-circuit voltage with light intensity, when the CT and CZT-samples were illuminated by 740-nanometer red color radiation, have been also investigated. It has been shown that the lux-current characteristics of zinc cadmium telluride sample depend on the applied voltage polarity the voltage-current characteristics strongly depend on the light intensity and have peculiar fracture at the coordinate zero-point. It has been assumed that within the sample the introduced electric field due to the technological ingot growth and annealing conditions exists.