SOI/SOS MOSFET Compact Macromodel Taking into Account Radiation Effects
A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated.
An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static and dynamic radiation influence are connected. Maximum simulation error is 5–7% in the dose range up to 1 Mrad. It is shown that EKV-RAD spends less CPU time by 15–30% for analog and 40–50% for digital SOI/SOS CMOS circuits simulations compared to BSIMSOI-RAD model.
An overview is given of published papers on investigations of ionizing radiation influence (gamma, neutron, and proton) on characteristics of silicon-germanium heterojunction transistors -- elements of SiGe BiCMOS integrated circuits of 4 generations with design rules 0.25, 0.18, 0.13, and 0.09 um. Experimental data are explained on the basis of modern understanding of radiation effects in bipolar junction transistors with proper consideration of silicon-geramnium heterostructure properties. It is shown that major SiGe HBT parameters (beta, gm, VA, fT, fmax etc.) are less succeptible to radiation influence unlike silicon transistors. In total absorbed dose, SiGe HBTs feature unique hardness, that is 50-100 Mrads for the latest SiGe technology.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.
The method of reduction of linear electric equivalent schemes is considered in this article. This method uses the property of the scheme which consists of subschemes with minimum connections. The macromodeling method is suggested to use for each subscheme. The macromodeling method allows excluding unimportant inner variables so the common count of equations will be essentially decreased. Thus suggested method allows increasing the speed of computing frequency characteristics and eigen values with minimum accuracy loss and also parallel computing can be organized. The experimental examples are given to compare time of analysis the given плотную model and the reduced model.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.