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Regular version of the site

Article

SOI/SOS MOSFET Compact Macromodel Taking into Account Radiation Effects

Russian Microelectronics. 2011. Vol. 40. No. 7. P. 457-462.

A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated.