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Regular version of the site

Article

Material gain of InGaAs/GaAs quantum well-dots

Semiconductor Science and Technology. 2021. Vol. 36. No. 1.
Gordeev N. Y., Максимов М. В., Payusov A. S., Serin A. A., Shernyakov Y. M., Mintairov S. A., Kalyuzhnyy N. A., Nadtochiy A., Zhukov A. E.

We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of the material gain on the current is well fitted by an
empirical exponential equation similar to the one used for quantum dots (QDs) in the whole
range of injection current densities. The estimated QWD transparency current-density-per-layer
of 31 A cm−2 ranks between the values reported for quantum wells and QDs. The maximal
QWD material gain as high as 1.1·104 cm−1 has been measured. The results obtained confirm
specific gain properties of InGaAs QWDs making them promising active media for lasers,
superluminescence diodes and optical amplifiers.