Magneto-Optical Studies of Narrow Band-Gap Heterostructures with Type II Quantum Dots InSb in an InAs Matrix
Spin is the only electron internal degree of freedom, and utilizing it in the new generation of semiconductor devices is the main goal of semiconductor spintronics. Today spintronics focuses mainly on diluted magnetic semiconductors (DMS) where ferromagnetism and giant Zeeman splitting can be obtained due to exchange interaction between free carriers and Mn ions. Most of the work has been focused on II–VI DMS such as CdMnTe or ZnMnSe and some others. Enhanced magnetic properties of these materials exist only at cryogenic temperatures due to paramagnetic behavior of the magnetic ions. A lot of recent investigations have been focused on doping III–V semiconductors into a DMS state. Although III–V DMS demonstrate the higher Curie temperature, Mn is much less soluble here than in II–VI semiconductors . Another issue is that in III–V compounds magnetic doping harmfully affects emission properties and, moreover, changes conductivity to p-type. We have proposed a new approach to the problem based on using narrow band--gap III–V compounds possessing the largest intrinsic electronic g-factor, which are InSb and InAs . Large electron g-factor, small effective electron mass and strong spin–orbit interaction at these semiconductors provide pronounced spin-related phenomena in absence of magnetic doping.
We report on broad-area lasers, mode-locked lasers (MLLs), and superluminescent light-emitting diodes (SLDs) based on a recently developed novel type of nanostructures that we refer to as quantum well-dots (QWDs). The QWDs are intermediate in properties between quantum wells and quantum dots and combine some useful properties of both. 1.08 μm InGaAs/GaAs QWDs broad area edge-emitting lasers based on coupled large optical cavity waveguides show high internal quantum efficiency of 92%, low internal loss of 0.9 cm-1 and material gain of ~1.1∙104 cm-1 per one QWD layer. CW output power of 14.2 W is demonstrated at room temperature. Superluminescent light-emitting diodes with one QWD layer in the active region exhibit stimulated emission spectra centered at 1050 nm with the maximal full width at half maximum of 36 nm and the output power of 17 mW. First results on mode-locked operation in QWD lasers are also presented. 2 mm long two-section devices demonstrate the pulse repetition rate of 19.3 GHz and the pulse duration of 3.5 ps. The width of the radio frequency spectrum is 0.2 MHz.
The anomalous magnetic moment (AMM) for excited states of an electron in a constant magnetic field has been calculated within the framework of two-dimensional electrodynamics. The analytical results for the interaction energy of the anomalous magnetic moment with the external magnetic field are obtained in two limiting cases of nonrelativistic and relativistic energy values in a comparatively weak magnetic field. It is shown that the interaction energy of the spin with the external field does not contain infrared divergence and tends to zero as magnetic field decreases, while the electron’s AMM increases logarithmically.
The problems of creation of a low intensity optical radiation signal standard sources based on the nanosized apertures and semiconductor quantum dots are considered. The use of technology of the focused ionic beam technology for isolation of a single quantum dot is offered suggested.
Quantum dot based monolithic edge-emitting semiconductor lasers at 1.25 m are ideal sources for the generation of broad optical frequency combs for optical communication applications. In this work, InAs/InGaAs quantum dot lasers with dierent total laser length to absorber length ratio and with dierent p-doping concentrations in the GaAs barrier sections are investigated experimentally in dependence on the gain injection current and absorber reverse bias voltage. A smaller mode-locking area is found for the p-doped device in dependence on the laser biasing conditions. For the undoped active region 1.3 ps short pulse widths at a pulse repetition rate of 20 GHz with a pulse-to-pulse timing jitter of 111 fs are reported for an absorber section length of 12% to the total cavity length. For an undoped and p-doped device short pulse emission between 2.5 ps and 5.5 ps is attained and a shorter absorber section length of 8% or 5%.
We suggest a pump-probe method for studying semiconductor spin dynamics based on pumping of carrier spins by a pulse of oscillating radiofrequency (rf) magnetic field and probing by measuring the Faraday rotation of a short laser pulse. We demonstrate this technique on n -GaAs and observe the onset and decay of coherent spin precession during and after the course of rf pulse excitation. We show that the rf field resonantly addresses the electron spins with Larmor frequencies close to that of the rf field. This opens the opportunity to determine the homogeneous spin coherence time T2 , that is inaccessible directly in standard all-optical pump-probe experiments.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.