Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors
The paper suggests a design of radiation sensors based on metal-oxide-semiconductor
(MOS) structures and p-channel radiation sensitive field eect transistors (RADFET) which are
capable to function under conditions of high-field tunnel injection of electrons into the dielectric.
We demonstrate that under these conditions, the dose sensitivity of the sensor can be significantly
raised, and, besides, the intensity of radiation can be monitored in situ on the basis of determining
the ionization current arising in the dielectric film. The paper proposes the model allowing to make a
quantitative analysis of charge eects taking place in the radiation MOS sensors under concurrent
influence of ionization radiation and high-field tunnel injection of electrons. Use of the model allows to
properly interpret results of the radiation control. In order to test the designed sensors experimentally,
we have utilized -rays, -particle radiation, and proton beams. We have acquired experimental
results verifying the enhancement of function capabilities of the radiation MOS sensors when these
have been under high-field injection of electrons into the dielectric.