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Universal negative magnetoresistance in antiferromagnetic metals from symmetry breaking of electron wave functions
Communications Materials, A Nature Portfolio journal (United Kingdom) ISSN 26624443. 2025. Vol. 6. No. 1. Article 252.
Layered van der Waals crystals of topologically non-trivial and trivial semimetals with antiferromagnetic (AFM) ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe2As2, EuSn2As2, EuSn2P2, etc., where the resistance decreases quadratically with field by about 5% up to the spin-polarization field. Although this effect is well documented experimentally, its theoretical explanation is missing up to date. Here, we propose a theoretical mechanism describing the observed magnetoresistance that is inherent in
AFM metals and is based on violation the binary ^T2 symmetry. It is almost isotropic to the field and current directions, contrary to the known mechanisms such as giant magnetoresistance and chiral anomaly. The proposed intrinsic mechanism of magnetoresistance is strong in a wide class of the layered AFM-ordered semimetals. The theoretically calculated magnetoresistance is qualitatively consistent with experimental data for crystals of various composition.
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Уилкокс П., Romanov A., М.: ДМК Пресс, 2025.
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