Universal negative magnetoresistance in antiferromagnetic metals from symmetry breaking of electron wave functions

Communications Materials, A Nature Portfolio journal (United Kingdom) ISSN 26624443. 2025. Vol. 6. No. 1. Article 252.

Grigoriev P., Pavlov N., Nekrasov I., Shein I., Sadakov A., Pudalov V.

Layered van der Waals crystals of topologically non-trivial and trivial semimetals with antiferromagnetic (AFM) ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe2As2, EuSn2As2, EuSn2P2, etc., where the resistance decreases quadratically with field by about 5% up to the spin-polarization field. Although this effect is well documented experimentally, its theoretical explanation is missing up to date. Here, we propose a theoretical mechanism describing the observed magnetoresistance that is inherent in
AFM metals and is based on violation the binary ^T2 symmetry. It is almost isotropic to the field and current directions, contrary to the known mechanisms such as giant magnetoresistance and chiral anomaly. The proposed intrinsic mechanism of magnetoresistance is strong in a wide class of the layered AFM-ordered semimetals. The theoretically calculated magnetoresistance is qualitatively consistent with experimental data for crystals of various composition.

Keywords: magnetoresistance, магнитосопротивление, antiferromagnet, Антиферромагнетики