Modification of dielectric films in MIS structures using the injection-thermal treatment
Dielectric films and siliconinsulator interfaces in metalinsulatorsemiconductor (MIS) structures are modified using injectionthermal treatment, which involves highfield injection of a specified charge into the gate dielectric and subsequent annealing of the structure. The effect of the injectionthermal treatment modes on the MIS structure modification is investigated. The injectionthermal treatment is shown to reduce imperfection of the dielectric films and, thus, enhance reliability of the MIS devices. It is established that the MIS structure modification processes occurring at the injectionthermal treatment are largely identical to those occurring at the radiation thermal treatment; therefore, for certain MIS devices, the radiation thermal treatment can be replaced by the injectionthermal one.