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Regular version of the site

Article

Injection Modification of Multilayer Dielectric Layers of Metal - Oxide - Semiconductor Structures at Different Temperatures

Inorganic Materials: Applied Research. 2014. Vol. 5. No. 2. P. 129-132.
Andreev V. V., Bondarenko G., Stolyarov A. A., Korotkov S. I.

The charge state change of MOS structures with multilayer dielectric films SiO2–PSG under highfield injection modification at different temperatures is studied in this article. The effect of temperature on the thermal stability of the negative charge component used to adjust the threshold voltage of MOS transistors is investigated. It is found that the performance of the highfield injection modification of MOS structures in the mode of constant current at elevated temperatures increases not only the density of the trapped negative charge but also its thermally stable component.