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Half-disk lasers with active region based on InGaAs/GaAs quantum well-dots
Laser Physics. 2022. Vol. 32. No. 12. Article 125802.
Zubov F., Eduard I. Moiseev, Maximov M., Vorobyev A., Mozharov A., Shernyakov Y., Kalyuzhnyy N., Mintairov S., Kulagina M., Dubrovskii V., Natalia V. Kryzhanovskaya, Alexey E. Zhukov
Half-disk lasers fabricated by cleaving initial full-disk lasers have an advantage of directional light outcoupling as well as increased output power and efficiency as compared to full-disk lasers of the same diameter. The continuous wave output power of a 200 µm diameter half-disk laser exceeds 70 mW. Quasi single-mode lasing with a high side-mode suppression ratio more than 20 dB is demonstrated for half-disk lasers of various diameters. A maximum 3 dB small signal modulation frequency of 4.9 GHz was measured for a 100 µm in diameter half-disk laser.
N.A. Fominykh, F.I. Zubov, K.A. Ivanov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.2 P. 126-132
In the present work, we study the possibility of the emission output of a semiconductor microring laser through a radially coupled optical waveguide. Room temperature lasing has been achieved in continuous wave regime with the wavelength of ~1090 nm. The characteristics of microlasers with and without waveguide have been compared. We have performed a spatial ...
Added: July 3, 2023
A.S. Dragunova, N.V. Kryzhanovskaya, F. I. Zubov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.2 P. 108-113
In this work, we study the characteristics of semiconductor microlasers based on the heterostructure with two coupled waveguides intended to improve heat dissipation in cw regime. We analysed total output optical loss of the microlasers, their spectral characteristics, output power, emission pattern and thermal resistance. We observed that the use of the principle of two ...
Added: July 3, 2023
Konstantin A. Ivanov, Alexey M. Nadtochiy, Natalia V. Kryzhanovskaya et al., Journal of Luminescence 2023 Vol. 255 Article 119620
The paper presents the results of a study of dynamic properties of InGaAs quantum well-dots (QWD) embedded in a GaAs matrix carried out by time-resolved photoluminescence (TRPL) in the temperature range of 10–300 K. The time dependence of the PL shows a long region of constant signal intensity. It was attributed to the filling of ...
Added: December 24, 2022
Fominykh N., Kryzhanovskaya N., Ivanov K. et al., Оптика и спектроскопия 2023 Т. 131 № 11 С. 1483-1485
Исследованы характеристики лазерной генерации микродисковых лазеров, сопряженных с оптическим волноводом и работающих в непрерывном режиме при повышенных температурах. Продемонстрированы лазерная генерация и волноводный эффект при температурах вплоть до 92.5 С. Измеренная характеристическая температура микролазеров составила 65 K в диапазоне 25-92.5 С. ...
Added: February 5, 2024
Nadtochiy A., Мельниченко И. А., Ivanov K. et al., Физика и техника полупроводников 2022 Т. 56 № 10 С. 993-996
Методами спектроскопии фотолюминесценции в непрерывном режиме и с разрешением по времени исследована гетероструктура с квантовыми яма-точками InGaAs/GaAs в диапазоне температур 10-300 K. Полученное время спада ФЛ разделено на излучательную и безызлучательную составляющие времени жизни носителей заряда. Обнаружено, что излучательное время жизни демонстрирует экспоненциальный рост с увеличением температуры, в то время как температурная зависимость безызлучательного времени ...
Added: January 4, 2023
I.A. Melnichenko, A.M. Nadtochiy, K.A. Ivanov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.1 P. 22-27
For the first time we show time-resolved photoluminescence dependencies with 0.2 ps resolution for the novel type of InGaAs/GaAs quantum-sized heterostructures, referred to as quantum well-dots (QWDs). Photoluminescence upconversion method, that allows achieving time resolution up to 0.2 ps, was used to obtain time-resolved spectra for light (lh) and heavy hole (hh) optical transitions of ...
Added: July 3, 2023
N. A. Fominykh, E. I. Moiseev, I. S. Makhov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 167-170
We present an investigation of optical coupling of injection microdisk and microring lasers with different diameters with a tapered fiber. We studied the dependences of the laser dominant mode intensity on the distance between the tapered fiber and the microlaser’s sidewall. For every studied laser a sharp intensity growth by 2–3 orders of magnitude was ...
Added: March 14, 2023
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Maximov M., Nadtochiy A., Kryzhanovskaya N. et al., Applied Sciences (Switzerland) 2020 Vol. 10 No. 3 Article 1038
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition of 4–16 monolayers of InxGa1−xAs of moderate indium composition (0.3 < x < 0.5) on GaAs substrates and represent dense arrays ...
Added: September 30, 2020
Zhukov A E, Optics Express 2018 Vol. 26 No. 11 P. 13985-13994
We report room temperature injection lasing in the yellow–orange
spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensilestrained
InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic
vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the
<111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier
insertions ...
Added: February 10, 2020
E. I. Moiseev, N. V. Kryzhanovskaya, Zubov F. I. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.2 P. 25-30
This paper is the first study of the far-field patterns of semiconductor microlasers with an active region based on In0.4Ga0.6As/GaAs quantum well-dots. A theoretical model describing the far-field radiation pattern is developed. It is shown that in the vertical direction the radiation pattern has a narrow beam divergence (the most of the power is confined ...
Added: March 15, 2023
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Zhukov A. et al., Optics Letters 2018 Vol. 43 No. 19 P. 4554-4557
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential ...
Added: September 27, 2020
Isaev N. K., E. I. Moiseev, N. A. Fominykh et al., , in : 8th International School and Conference "Saint Petersburg OPEN 2021" on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2021. : Institute of Physics Publishing (IOP), 2021. Ch. 012082.
Added: October 26, 2022
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 12 С. 1223-1228
The rate equations are used to analyze the characteristics
of a tandem consisting of a laser diode and a semiconductor
optical amplifier made of a single heterostructure with quantum
dots. The optimal value of the current distribution coefficient
the amplifier and the laser, as well as the optimal resonator
length that provides the highest output power of the tandem
were determined. ...
Added: November 25, 2021
Makhov I., Бекман А. А., Кулагина М. М. et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40-43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
Kryzhanovskaya N., Moiseev E., Зубов Ф. И. et al., Photonics Research 2019 Vol. 7 No. 6 P. 664-668
GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the ...
Added: December 9, 2020
Жуков А. Е., СПб. : ПОЛИТЕХ-ПРЕСС, 2019
Пособие включает в себя учебные материалы по физике и технологии полупроводниковых квантовых точек и лазеров на основе квантовых точек, включая микролазеры. Квантовые точки – это новая разновидность полупроводниковых квантоворазмерных структур (наноструктур), в которых движение носителей заряда ограничено во всех трех направлениях. Возникающая в результате размерного квантования модификация плотности состояний, а также большая энергия локализации носителей ...
Added: February 10, 2020
Kryzhanovskaya N., Moiseev E., Максимов М. В. et al., Bellingham : SPIE, 2020
Proceedings of the SPIE PHOTONICS EUROPE Conference on Biophotonics in Point-of-Care, 6-10 April 2020, Online Only, France. Proc. SPIE volume 11361 ...
Added: September 21, 2020
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Zubov F. I., Shernyakov Y. M., Gordeev N. Y. et al., Quantum Electronics 2022 Vol. 52 No. 7 P. 593-596
Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated ...
Added: December 13, 2022
Зубов Ф. И., Максимов М. В., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 16 С. 3-6
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, ...
Added: August 25, 2020