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News
July 9, 2026
HSE Economists Use Search Queries to Forecast Birth Rates
Researchers from the HSE Faculty of Economic Sciences have shown that the accuracy of birth rate forecasts for Russia can be improved by almost 50% by incorporating the dynamics of online search queries related to pregnancy and childbirth into forecasting models. In the best-performing models, the forecasting error fell from 4.6% to 3.2%. The findings have been published in Populations and Economics.
July 8, 2026
HSE Researchers Discover Who Eats Out in Russia-And Why
Around one-third of Russians (31.3%) rarely eat out or buy ready-made meals. The core group of active consumers—those who eat out or purchase prepared food almost every day or several times a week—accounts for only about 9% of the population. These are the findings of a study conducted by the HSE Institute for Social Policy. According to the researchers eating out is no longer a marker of high social status in Russia.
July 8, 2026
HSE University and RREDA Join Forces to Support 2026 Renewable Energy of the Planet Competition
HSE University and the Russia Renewable Energy Development Association (RREDA) have signed a partnership and information cooperation agreement to support Renewable Energy of the Planet—2026, a national competition with international participation for students and early-career researchers. Applications are open on the competition's website until September 20, 2026.

 

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Учет влияния температуры на радиационный сдвиг порогового напряжения МОП-транзистора в системе TCAD

Известия высших учебных заведений. Электроника. 2013. № 4. С. 96–97.
Petrosyants K. O., Popov D.

For the correct accounting of joint effects of radiation and temperature on characteristics of MOSFETs with the help of TCAD system the nonlinear correction coefficient which considers change of concentration of traps from temperature is entered into model of traps volume density in oxide.

Priority areas: engineering science
Language: Russian
Full text
Keywords: TCADМОП-транзистортемператураMOSFETTCADtemperatureTotal Ionization Doseобщее ионизирующее излучение
Publication based on the results of:
Development of the methods for multilevel research and simulation of modern temperature and radiation hardened microelectronic components from material level to circuit level (2013)
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