• A
  • A
  • A
  • АБВ
  • АБВ
  • АБВ
  • A
  • A
  • A
  • A
  • A
Обычная версия сайта
  • RU
  • EN
  • HSE University
  • Publications
  • Articles
  • Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
  • RU
  • EN
Расширенный поиск
Высшая школа экономики
Национальный исследовательский университет
Priority areas
  • business informatics
  • economics
  • engineering science
  • humanitarian
  • IT and mathematics
  • law
  • management
  • mathematics
  • sociology
  • state and public administration
by year
  • 2027
  • 2026
  • 2025
  • 2024
  • 2023
  • 2022
  • 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • 2000
  • 1999
  • 1998
  • 1997
  • 1996
  • 1995
  • 1994
  • 1993
  • 1992
  • 1991
  • 1990
  • 1989
  • 1988
  • 1987
  • 1986
  • 1985
  • 1984
  • 1983
  • 1982
  • 1981
  • 1980
  • 1979
  • 1978
  • 1977
  • 1976
  • 1975
  • 1974
  • 1973
  • 1972
  • 1971
  • 1970
  • 1969
  • 1968
  • 1967
  • 1966
  • 1965
  • 1964
  • 1963
  • 1958
  • More
Subject
News
June 5, 2026
Neural Network Maps as a Method for Constructing Mathematical Models
Scientists from HSE University–Nizhny Novgorod and the Institute of Physics Belgrade, Serbia, are jointly exploring the application of machine learning techniques and neural networks to the study of nonlinear dynamics. Natalya Stankevich, Leading Research Fellow at the Laboratory of Topological Methods in Dynamics of the Faculty of Informatics, Mathematics, and Computer Science at HSE University–Nizhny Novgorod, spoke to the HSE News Service about this international project.
June 5, 2026
‘In the Age of Technology, It Is Interesting to Look into the Past and Think about What We Can Take from It
Polina Tabakova decided to apply for a Philology degree at HSE in Nizhny Novgorod because she grew up in Mari El and did not want to move far away from the Russian forests. In an interview for the Young Scientists of HSE University project, she spoke about the genre of the campus novel, the existential drama of Kolobok, and a blackout version of Eugene Onegin.
June 5, 2026
HSE Scientists Develop Method to Compress Large Language Models Without Losing Quality
Researchers from the AI and Digital Science Institute at the HSE Faculty of Computer Science have developed a new compression method for large language models such as GPT and LLaMA that reduces their size by 25–36% without additional training or significant loss of accuracy. This is the first approach to use mathematical transformations—specifically, rotations of model weights—to make models more amenable to compression with structured matrices. The study results have been published in ACL Findings 2025. The code is available on GitHub.

 

Have you spotted a typo?
Highlight it, click Ctrl+Enter and send us a message. Thank you for your help!

Publications
  • Books
  • Articles
  • Chapters of books
  • Working papers
  • Report a publication
  • Research at HSE

?

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

St. Petersburg Polytechnical University Journal: Physics and Mathematics. 2022. Vol. 15. No. 3.3. P. 311–314.
Gridchin V. O., Reznik R. R., Kotlyar K. P., Shugabaev T. M., A. S. Dragunova, N. V. Kryzhanovskaya, Cirlin G. E.

In this work, we study the influence of the substrate temperature on the structural and optical properties of InGaN nanostructures synthesized by plasma-assisted molecular beam epitaxy. We show that ternary InGaN alloys with a chemical composition within the miscibility gap can be synthesized under N-rich growth conditions at the substrate temperatures from 600 to 670 °C. The results can be used to create visible and white light-emitting diodes on Si substrates.

Research target: Physics Nanotechnologies
Language: English
Full text
DOI
Text on another site
Keywords: siliconInGaN
Publication based on the results of:
Investigation of the characteristics of micro- and nanolasers based on A3B5 semiconductor heterostructures of various quantum dimensions (2023)
Similar publications
Two-dimensional hexagonal boron nitride-ferrofluid hybrids enable efficient magnetic cooling
Карцев А. И., Nishant T., Saswata G. et al., Journal of Materials Chemistry C 2026 Article -
Overheating remains a critical limitation in high-performance electronic and computing systems, necessitating the development of efficient thermal management fluids. In this work, a magnetically responsive hybrid ferrofluid was developed by incorporating two-dimensional hexagonal boron nitride (2D-hBN) nanosheets into a Mn–Zn–ferrite-based ferrofluid. The hybrid system retains magnetic responsiveness while leveraging the high in-plane thermal conductivity and chemical stability of 2D-hBN nanosheets. ...
Added: June 2, 2026
The critical role of shear antiphase boundaries in τ-Mn(Al,Ga) rapidly quenched alloy
Карцев А. И., Fortuna A. S., Gorshenkov M. V. et al., Journal of Alloys and Compounds 2026 Vol. 1070 Article 188711
The τ-phase in Mn-Al-Ga alloys is a promising candidate for rare-earth-free permanent magnets. This study re-veals that the τ(γ₂)-phase in rapidly quenched Mn55Al36Ga9 ribbons contains a high density of dislocations, which form antiphase boundaries (APBs). Using transmission electron microscopy and density functional theory, we demonstrate that Mn atoms at these APBs couple antiferromagnetically. This antiferromagnetic interaction is identified ...
Added: June 2, 2026
Combined Experimental and Ab Initio Study of Sc Doping in MgB2: Decoupling Electronic and Microstructural Effects on Superconductivity
Dikhtievskaya K., Argunov E., Карцев А. И. et al., The Journal of Physical Chemistry Letters 2026 Vol. 17 No. 17 P. 4999–5004
In this study we revealed the effect of scandium doping on the electronic and superconducting properties of the MgB2 compound. Calculations demonstrate that Sc substitutes for Mg atoms, acting as an electron donor. Mg substitution diminishes the density of states in the σ-band and attenuates the electron–phonon coupling, thereby elucidating the reduction in critical temperature. Simultaneously, ...
Added: June 2, 2026
Bridging Superconductors With United Nations Development Goals: Perspectives and Applications
Duran E. ., Pulgar A., Izquierdo R. et al., Physica Status Solidi (A) Applications and Materials 2026 Vol. 223 No. 7 Article e202500942
Ceramic superconductors exhibit remarkable properties, including zero electrical resistance and potent magnetic behavior, operating at temperatures as high as the boiling points of liquid nitrogen (77 K) and liquid hydrogen (20 K). These characteristics position them as key enablers for sustainable technologies spanning electric propulsion, lossless energy transmission, advanced medical imaging, and quantum computation. This review presents ...
Added: June 1, 2026
Численное моделирование полевой эмиссии из полупроводникового катода в вакуум
Borisov V., Danilov V., Электросвязь 2025 № 12 С. 73–84
Представлены результаты математического моделирования процесса полевой эмиссии из катода малых размеров – одного из основных физических процессов, обеспечивающих работы многих электронных устройств, в частности FED-дисплеев (устройства, работающие на принципе полевой эмиссии), кантилеверов и т.д. Дается краткий обзор текущих результатов в области исследования, обосновывается актуальность задачи, приводятся примеры наиболее вероятного использования результатов решения задачи. Обсуждаются физические ...
Added: May 29, 2026
Электростатически управляемый контроль диссипации в двумерном наноэлектромеханическом резонаторе через напряжение-амплитудный антагонизм с рекордной 928% подстройкой добротности.
Arutyunov K., JIANG1 Q., FANG J. et al., Science China Information Sciences 2026 Vol. 69 No. 6 P. 1–11
Resonators based on nanoelectromechanical systems (NEMS) using two-dimensional (2D) materials with high-quality factors and excellent electrical control are critical for tunable coherent phonon dynamics, resonant sensors and wireless communications. However, their performance is fundamentally limited by the lack of a unified framework governing energy dissipation mechanisms and their electrical tunability. Here, we synergistically modulate both ...
Added: May 28, 2026
Enhanced Terahertz Thermoelectricity Via Engineered Van Hove Singularities and Nernst Effect in Moiré Superlattices
Elesin L., Shilov A., Jana S. et al., Advanced Functional Materials 2026 P. 1–10
Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise, bias-free THz detection, yet conventional thermoelectrics lack the sensitivity required for practical devices. Thermoelectric coefficients can be strongly enhanced near van Hove singularities (VHS), though these ...
Added: May 28, 2026
Non-linear in-band interference cancellation on base of conjugate gradients method
Degtyarev A., Bakhurin S., Yudin N., DSPA 2026 P. 1–6
This paper investigates one possible solution to the problem of self-interference cancellation (SIC) arising in the design of in-band full-duplex (IBFD) communication systems. Self-interference cancellation is performed in the digital domain using multilayer nonlinear models adapted via gradient-based optimization. The presence of local minima and saddle points during the adaptation of multilayer models limits the ...
Added: May 26, 2026
Ising models on the hydrogen peroxide and other lattices
Qian X., Deng Y., Lev N. Shchur et al., Physica A: Statistical Mechanics and its Applications 2026 Vol. 696 Article 131679
We perform a Monte Carlo analysis of the Ising model on many three-dimensional lattices. By means of finite-size scaling we obtain the critical points and determine the scaling dimensions. As expected, the critical exponents agree with the three-dimensional Ising universality class for all models. The irrelevant field, as revealed by the correction-to-scaling amplitudes, appears to ...
Added: May 24, 2026
Оптические методы детектирования единичных биомолекул: визуализация, сенсорика, секвенирование молекул ДНК
Melentiev P. N., Калмыков А. С., Гритченко А. С. et al., Успехи физических наук 2024 Т. 194 № 11 С. 1130–1145
Представлен краткий обзор достигнутого уровня оптических методов детектирования единичных молекул в биомедицинских приложениях. Показано, что регистрация флуоресценции единичных молекул красителей, ковалентно связанных с антителами (биомолекулами), совместно с использованием современных методов нанофотоники может быть применена для решения различных задач в биологии и медицине: визуализации биомолекул, токсинов, вирусных частиц, определения ультранизких концентраций аналитов напрямую во взятой пробе, ...
Added: May 21, 2026
VACUUM DISCHARGE DRIVEN BY STRIPE LINE STORAGE AS A SOURCE OF EUV RADIATION
Antsiferov P.S., Stepanov L.V., Matiukhin N. D., Review of Scientific Instruments 2025 Vol. 96 No. 12 Article 123506
The article presents the discharge plasma based source of extreme ultraviolet (EUV) radiation. The discharge circuit has been driven by means of stripe line storage with working voltage 10.5 kV. The main feature of the proposed source is that plasma electrons acquire the energy, necessary for the production of multiply charged ions with ionization potentials ...
Added: May 20, 2026
Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment
Shandyba N. A., Eremenko M. M., Dukhan D. D. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2025 Vol. 18 No. 3.1 P. 19–22
This work demonstrates, for the first time, the selective formation of ordered arrays of vertical GaAs nanowires on Si(111) with a native oxide layer using a two-step pre-treatment of the substrate surface with a focused Ga-ion beam. Based on our previous studies, we show that modifying the substrate through a two-step protocol — first applying ...
Added: December 11, 2025
Surface diffusion of phosphorus on Si(100) after PBr3 adsorption
Pavlova T., Shevlyuga V. M., Physical Chemistry Chemical Physics 2025 Vol. 27 No. 43 P. 23421–23427
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr_3 molecule, which fully dissociates on the surface at 77 K. We observed diffusion of P atoms both along and across the rows of Si dimers. To support the observation ...
Added: October 20, 2025
Calculations of pathways of precise P incorporation into chlorinated Si(100) surface
T. V. Pavlova, Journal of Chemical Physics 2025 Vol. 162 No. 19 P. 194701–194701
Added: June 27, 2025
Идентификация парамагнитных центров спин-зависимой рекомбинации на поверхности пластин кремния
Власенко Л. С., Fedosov I. S., Письма в Журнал технической физики 2024 Т. 50 № 9 С. 3–5
Electron paramagnetic resonance spectra of centers localized on (111), (110), and (100) oriented surface of silicon wafers were observed and studied using spin dependent microwave photoconductivity. The wafers were not subjected to high temperature oxidization, but oxidized on air at room temperature. The optimal experimental conditions for detection the surface recombination centers, having the sensitivity ...
Added: May 12, 2025
Instantaneous growth of single monolayers as the origin of spontaneous core–shell InxGa1−xN nanowires with bright red photoluminescence
Dubrovskii V., Cirlin G., Kirilenko D. et al., Nanoscale Horizons 2024 Vol. 9 No. 12 P. 2360–2367
Increasing the InN content in the InxGa1xN compound is paramount for optoelectronic applications. It has been demonstrated in homogeneous nanowires or deliberately grown nanowire heterostructures. Here, we present spontaneous core–shell InxGa1xN nanowires grown by molecular beam epitaxy on Si substrates at 625 C. These heterostructures have a high InN fraction in the cores around 0.4 ...
Added: November 23, 2024
PBr3 adsorption on a chlorinated Si(100) surface with mono- and bivacancies
Pavlova T., Shevlyuga V. M., Journal of Chemical Physics 2024 Vol. 160 No. 5 Article 054701
For the most precise incorporation of single impurities in silicon, which is utilized to create quantum devices, a monolayer of adatoms on the Si(100) surface and a dopant-containing molecule are used. Here we studied the interaction of a phosphorus tribromide with a chlorine monolayer with mono- and bivacancies in a scanning tunneling microscope (STM) at ...
Added: July 2, 2024
Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE
Gridchin V. O., Dragunova A., Kotlyar K. P. et al., Journal of Physics: Conference Series 2021 Vol. 2086 Article 012013
The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separated nanowires, whereas the growth for 2h 30min and 3h leads to the formation of nanostructures such ...
Added: May 31, 2024
On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties
Gridchin V. O., Komarov S. D., Soshnikov I. P. et al., Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques 2024 Vol. 18 No. 2 P. 408–412
In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are investigated. It is found that the formation of InGaN nanowires with a core–shell structure occurs when the III/V flux ratio (taking into account the In-incorporation ...
Added: May 20, 2024
Исследование оптических свойств нановключений InP/InAsP/InP в кремнии
Мельниченко И. А., Komarov S., Dragunova A. et al., Письма в Журнал технической физики 2024 Т. 50 № 5 С. 3–6
С помощью конфокальной оптической микроскопии и спектроскопии микрофотолюминесценции исследованы субмикронные нановключения InAsxP1-x/InP, сформированные методом селективного эпитаксиального роста в кремнии с использованием металлоорганической газофазной эпитаксии и расплавленной капли элемента III группы. Исследовано влияние расстояния между нановключениями на интенсивность фотолюминесценции, получены температурные зависимости фотолюминесценции в диапазоне 77-290 K. При комнатной температуре получено излучение в спектральном диапазоне 1.2 ...
Added: February 13, 2024
Enhancing the reactivity of Si(100)–Cl toward PBr3 by charging Si dangling bonds
T. V. Pavlova, V. M. Shevlyuga, Journal of Chemical Physics 2023 Vol. 159 No. 21 Article 214701
The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and then exposed to PBr3 directly in the STM chamber. Uncharged DBs rarely react with molecules. On the contrary, almost all positively charged DBs were filled with molecule fragments. ...
Added: January 29, 2024
Photoluminescence Redistribution of InGaN Nanowires Induced by Plasmonic Silver Nanoparticles
Shugabaev T., Gridchin V. O., Sergey D. Komarov et al., Nanomaterials 2023 Vol. 13 No. 6 Article 1069
Hybrid nanostructures based on InGaN nanowires with decorated plasmonic silver nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles induce the redistribution of room temperature photoluminescence between short-wavelength and long-wavelength peaks of InGaN nanowires. It is defined that short-wavelength maxima decreased by 20%, whereas the long-wavelength maxima increased by 19%. We ...
Added: July 3, 2023
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
Reznik R. R., Gridchin V. O., Kotlyar K. P. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.1 P. 153–157
AlGaAs nanowires with InAs quantum dots on the silicon surface were synthesized by molecular-beam epitaxy. Morphological and optical properties of grown nanostructures were studied. It is important to note, that emission from quantum dots is observed in the wavelength range from 780 to 970 nm. Assumptions about the nature of short-wave radiation from quantum dots ...
Added: July 3, 2023
Atomistic simulation of Si-Al nanosponge structure features produced by laser printing method
Zelenina A. I., Gordeev I. S., Kolotova L., Journal of Non-Crystalline Solids 2023 Vol. 606 Article 122215
Plasmonic nanoobjects have many applications from biosensors to electronic device components. The most promising method for obtaining such objects is the laser printing method due to the possibility of controlling the resulting structure by experimental conditions. In this work, the influence of laser printing initial parameters and Al content on silicon-aluminum nanoparticles (NPs) structure were investigated by a combination ...
Added: June 28, 2023
  • About
  • About
  • Key Figures & Facts
  • Sustainability at HSE University
  • Faculties & Departments
  • International Partnerships
  • Faculty & Staff
  • HSE Buildings
  • HSE University for Persons with Disabilities
  • Public Enquiries
  • Studies
  • Admissions
  • Programme Catalogue
  • Undergraduate
  • Graduate
  • Exchange Programmes
  • Summer University
  • Summer Schools
  • Semester in Moscow
  • Business Internship
  • Research
  • International Laboratories
  • Research Centres
  • Research Projects
  • Monitoring Studies
  • Conferences & Seminars
  • Academic Jobs
  • Yasin (April) International Academic Conference on Economic and Social Development
  • Media & Resources
  • Publications by staff
  • HSE Journals
  • Publishing House
  • iq.hse.ru: commentary by HSE experts
  • Library
  • Economic & Social Data Archive
  • Video
  • HSE Repository of Socio-Economic Information
  • HSE1993–2026
  • Contacts
  • Copyright
  • Privacy Policy
  • Site Map
Edit