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Temperature stability of small-signal modulation response of WGM microlasers with InGaAs/GaAs quantum well-dots in the active region
Ch. 012082.
Isaev N. K., E. I. Moiseev, N. A. Fominykh, N. V. Kryzhanovskaya, F. I. Zubov, K. A. Ivanov, I. S. Makhov, M. V. Maximov, A. E. Zhukov
In book
Zhukov A. Institute of Physics Publishing (IOP), 2021
Dragunova A., Kryzhanovskaya N., Moiseev E. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 163-166
In this work we study characteristics of the III-V microdisk lasers bonded onto silicon board. The bonding of microdisk lasers to the silicon substrate reduces their thermal resistance. Here we show improvement in output power, lasing threshold, dynamic characteristics and energy consumption in microdisk lasers with diameters of 31 μm and 19 μm by comparison ...
Added: March 14, 2023
A.S. Dragunova, N.V. Kryzhanovskaya, F. I. Zubov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.2 P. 108-113
In this work, we study the characteristics of semiconductor microlasers based on the heterostructure with two coupled waveguides intended to improve heat dissipation in cw regime. We analysed total output optical loss of the microlasers, their spectral characteristics, output power, emission pattern and thermal resistance. We observed that the use of the principle of two ...
Added: July 3, 2023
N.A. Fominykh, F.I. Zubov, K.A. Ivanov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.2 P. 126-132
In the present work, we study the possibility of the emission output of a semiconductor microring laser through a radially coupled optical waveguide. Room temperature lasing has been achieved in continuous wave regime with the wavelength of ~1090 nm. The characteristics of microlasers with and without waveguide have been compared. We have performed a spatial ...
Added: July 3, 2023
Zubov F., Eduard I. Moiseev, Maximov M. et al., Laser Physics 2022 Vol. 32 No. 12 Article 125802
Half-disk lasers fabricated by cleaving initial full-disk lasers have an advantage of directional light outcoupling as well as increased output power and efficiency as compared to full-disk lasers of the same diameter. The continuous wave output power of a 200 µm diameter half-disk laser exceeds 70 mW. Quasi single-mode lasing with a high side-mode suppression ratio ...
Added: December 13, 2022
Zhukov A., Moiseev E., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2019 Т. 45 № 16 С. 49-51
The characteristics of a 23-μm in diameter microdisk laser are studied under high-frequency modulation with a heatsink stabilized at 18оC. It is shown that the minimum consumption of electrical energy is 1.6 pJ/bit as achieved at modulation frequency of 4.2 GHz. The maximum modulation frequency reaches 6.7 GHz with energy consumption of 3.3 pJ/bit. ...
Added: December 8, 2020
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 11 С. 3-7
The performance of quantum dot microdisk lasers operating at room temperature without thermal stabilization was experimentally investigated, and the highest modulation bandwidth of microdisks of various diameters was calculated. It is shown that taking into account the self-heating effect of the microlaser at high bias currents, which manifests itself in a decrease in the maximum ...
Added: May 25, 2020
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 2 С. 195-200
Analytical expressions are presented, and, through them, the analysis of component parts of the electrical resistance of injection microdisk lasers is carried out depending on the size of the microdisk resonator, parameters of the substrate, and configuration of the contact to it. ...
Added: March 11, 2021
Zhukov A, Natalia Kryzhanovskaya, Scientific Reports 2019 Vol. 9 No. 1 P. 5635
The development of a fast semiconductor laser is required for the realization of next-generation
telecommunication applications. Since lasers operating on quantum dot ground state transitions
exhibit only limited gain due to the saturation effect, we investigate lasing from excited states and
compare its corresponding static and dynamic behavior to the one from the ground state. InAs quantum
dots (QDs) ...
Added: February 10, 2020
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 12 С. 1223-1228
The rate equations are used to analyze the characteristics
of a tandem consisting of a laser diode and a semiconductor
optical amplifier made of a single heterostructure with quantum
dots. The optimal value of the current distribution coefficient
the amplifier and the laser, as well as the optimal resonator
length that provides the highest output power of the tandem
were determined. ...
Added: November 25, 2021
Оценка вклада поверхностной рекомбинации в микродисковых лазерах с помощью высокочастотной модуляции
Zhukov A., Moiseev E., Kryzhanovskaya N. et al., Физика и техника полупроводников 2019 Т. 53 № 8 С. 1122-1127
Исследованы микродисковые лазеры диаметром 10−30 мкм, работающие при комнатной температуре без
термостабилизации, с активной областью на основе наноструктур гибридной размерности — квантовых
ям−точек. Выполнены высокочастотные измерения отклика микролазеров в режиме прямой малосигнальной
модуляции, с помощью которых установлены параметры быстродействия и проведен их анализ в зависимости
от диаметра микролазера. Обнаружено, что K-фактор составляет (0.8 ± 0.2) нс, что соответствует оптическим ...
Added: October 1, 2020
Konstantin A. Ivanov, Alexey M. Nadtochiy, Natalia V. Kryzhanovskaya et al., Journal of Luminescence 2023 Vol. 255 Article 119620
The paper presents the results of a study of dynamic properties of InGaAs quantum well-dots (QWD) embedded in a GaAs matrix carried out by time-resolved photoluminescence (TRPL) in the temperature range of 10–300 K. The time dependence of the PL shows a long region of constant signal intensity. It was attributed to the filling of ...
Added: December 24, 2022
I.A. Melnichenko, A.M. Nadtochiy, K.A. Ivanov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.1 P. 22-27
For the first time we show time-resolved photoluminescence dependencies with 0.2 ps resolution for the novel type of InGaAs/GaAs quantum-sized heterostructures, referred to as quantum well-dots (QWDs). Photoluminescence upconversion method, that allows achieving time resolution up to 0.2 ps, was used to obtain time-resolved spectra for light (lh) and heavy hole (hh) optical transitions of ...
Added: July 3, 2023
N. V. Kryzhanovskaya, K. A. Ivanov, N. A. Fominykh et al., Journal of Applied Physics 2023 Vol. 134 No. 10 Article 103101
We report on InGaAs/GaAs quantum dot injection microdisk lasers laterally connected with a bus waveguide fabricated by planar technology from the same epi-structure. Various coupling schemes of microlaser with waveguide are studied including a microlaser attached to a waveguide (zero gap), a 100 nm gap for evanescence light outcoupling, and with a waveguide surrounding the ...
Added: October 30, 2023
Nadtochiy A., Мельниченко И. А., Ivanov K. et al., Физика и техника полупроводников 2022 Т. 56 № 10 С. 993-996
Методами спектроскопии фотолюминесценции в непрерывном режиме и с разрешением по времени исследована гетероструктура с квантовыми яма-точками InGaAs/GaAs в диапазоне температур 10-300 K. Полученное время спада ФЛ разделено на излучательную и безызлучательную составляющие времени жизни носителей заряда. Обнаружено, что излучательное время жизни демонстрирует экспоненциальный рост с увеличением температуры, в то время как температурная зависимость безызлучательного времени ...
Added: January 4, 2023
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2021 Т. 47 № 13 С. 28-31
The energy consumption of an uncooled microdisk quantum well-dot laser under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal. ...
Added: October 11, 2021
Kryzhanovskaya N., Moiseev E., Dragunova A. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2022 Vol. 15 No. 3.3 P. 371-375
In this work, we study III-V p-i-n photodetectors and disk microlasers in terms of their static and small-signal modulation frequency response. InGaAs/GaAs quantum welldots (QWDs) are used as the active region of the devices to provide operation wavelength around 1.1 µm, high optical and frequency response and temperature stability of characteristics. 30 µ m-in-diameter microdisk ...
Added: March 14, 2023
Зубов Ф. И., Максимов М. В., Kryzhanovskaya N. et al., Письма в Журнал технической физики 2021 Т. 47 № 20 С. 3-6
The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power ...
Added: October 14, 2021
Makhov I., Бекман А. А., Кулагина М. М. et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40-43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov et al., IEEE Photonics Technology Letters 2022 Vol. 34 No. 24 P. 1349-1352
We report on the fabrication and studies of
Ø100 μm half-disk lasers with an active region based on
InGaAs/GaAs quantum dots providing very high modal gain.
Such resonators support whispering gallery modes propagating
at the cavity periphery. The microlasers show directional light
outcoupling: continuous-wave output power emitted from the
flat side reaches 17 mW, which is about 7 times greater than
the ...
Added: December 13, 2022
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Zhukov A., Moiseev E., Nadtochiy A. et al., Technical Physics Letters 2020 Vol. 46 P. 515-519
The operation speed of microdisk lasers with quantum dots working at room temperature without thermal stabilization has been experimentally examined, and the widest modulation bandwidth of microdisks with various diameters has been calculated. It was shown that taking into account the effect of self-heating of a microlaser at high bias currents, which is manifested in ...
Added: September 29, 2020
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Light: Science and Applications 2021 Vol. 10 P. 1-11
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with ...
Added: April 19, 2021