Ultra-short stripe microlasers fabricated with a focused ion beam etching technique

Optics Letters. 2025. Vol. 50. No. 2. P. 387–390.

Makhov I., Komarov S., Fominykh N., Anna Obraztsova, Veronica Voitovich, Nikolay Derkach, Ivan Melnichenko, Shandyba N., Chernenko N., Solodovnik M., Lipovskii A., Shernyakov Y., Kalyuzhnyy N., Mintairov S., Kryzhanovskaya N., Zhukov A.

Fabry–Perot (FP) lasers with a cavity length shorten down to 50 μm were investigated. One or two laser mirrors were
formed by focused ion beam etching. InGaAs quantum dots of high density were used as the laser active region. The
lasers operate in a pulsed regime up to at least 105°S. A comparison with lasers formed by the facet cleaving method
(minimum length is 100 μm) reveals the similarity of the emissionwavelength and the threshold current depending on
the cavity length. This allows us to conclude that the etched facets do not significantly affect the non-radiative recombination rate and provide a reflection coefficient close to that of the cleaved facet. The maximum modal gain was estimated to be not less than 240 cm^−1. No evidence of the excited-state lasing was found.

Keywords: quantum dot, квантовые точки, microlaser, микролазеры, диодный лазер, Diode laser, ионное травление, Fabry-Perot cavity, ion etching, Фабри-Перо резонатор

Publication based on the results of: Создание и исследование полупроводниковых гетероструктур А3В5 с квантовыми точками для нанофотоники, излучателей одиночных фотонов, микро- и нанолазеров (2024)