?
Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon
Semiconductor Science and Technology. 2022. Vol. 37. No. 7. Article 075010.
F I Zubov, E I Moiseev, A M Nadtochiy, N A Fominykh, K A Ivanov, I S Makhov, A S Dragunova, M V Maximov, N A Kryzhanovskaya, A E Zhukov
Epi-side down bonding on a silicon substrate of AlGaAs/GaAs microdisk lasers is presented. A heterostructure with coupled large optical cavities enables location of an InGaAs quantum dot active region at a distance of ∼1 µm from the heterostructure surface. The thermal resistance was reduced to 0.2 and 0.1 K/mW for disks of 30 and 50 µm in diameter, respectively. The maximum continuous-wave power limited by the thermal rollover is more than doubled after bonding.
Gurina D., Fashchevsky K. A., Oparin R. D. et al., Surfaces and Interfaces 2026 Vol. 98 Article 110545
In this work, we combine experimental characterization and molecular dynamics (MD) simulations to elucidate the molecular mechanisms governing the impregnation of mefenamic acid (MFA) into nanocrystalline cellulose (NCC) aerogels. NCC aerogels were impregnated with MFA in scCO2, and low-temperature nitrogen adsorption revealed a concentration-dependent decrease in surface area, pore volume, and pore size, with an ...
Added: September 8, 2026
Huang D., Chen Y., Luo X. et al., Chinese Journal of Physics 2026 Vol. 103 P. 1803–1814
Using self-consistent Bogoliubov-de Gennes calculations for kagome flakes framed by armchair
and flat edges, we observe a configuration-dependent spatial inhomogeneity of an 𝑠-wave superconducting
condensate. Specifically, at half-filling, the local pair potential is significantly enhanced
by up to 77.8% at edge centers and up to 148.9% at corners, subsequently boosting their
local critical temperatures by up to 13.5% and ...
Added: September 7, 2026
Marychev P., Shanenko A., Physical Review B: Condensed Matter and Materials Physics 2026 Vol. 114 No. 7 Article 074509
We investigate the effect of weak interband impurity scattering on the intertype (IT) domain between type-I and type-II superconductivity in diffusive two-band superconductors. Our results show that the significant broadening of the IT domain with increasing band diffusivity ratio, previously established in the absence of interband scattering, persists under weak interband scattering. However, depending on ...
Added: September 7, 2026
Denis K., Н. Новгород: Нижегородский государственный университет им. Н.И. Лобачевского, 2025.
В учебном пособии излагаются элементы теории и описание избранных экспериментальных результатов, полученных в активно развивающейся физике топологических изоляторов. Рассмотрены наиболее простые модели поверхностных и краевых состояний в двумерных и трёхмерных топологических изоляторах, их структура в магнитном поле, а также основы топологических методов для определения их свойств. Обсуждаются модели квантовых точек, формируемых в топологических изоляторах. Приведены ...
Added: September 6, 2026
Denis K., Звонков Б. Н., Вихрова О. В. et al., Физика твердого тела 2021 Т. 63 № 9 С. 1245–1252
Сочетанием методов МОС-гидридной эпитаксии и импульсного лазерного нанесения изготовлены гетеронаноструктуры InGaAs/GaAs со слоем (Ga, Mn)As на поверхности, и исследовано влияние воздействия импульсного эксимерного лазера (длина волны 248 nm, длительность импульса ~30 ns, плотность энергии в диапазоне 200-360 mJ/cm2) на их излучательные, структурные и гальваномагнитные свойства. При исследованиях использовалась спектроскопия фотолюминесценции, дополненная возможностью анализа поляризационных характеристик ...
Added: September 6, 2026
Воздействие импульсов эксимерного лазера на светоизлучающие InGaAs/GaAs-структуры с (Ga, Mn)As-слоем
Denis K., Вихрова О. В., Данилов Ю. А. et al., Физика твердого тела 2021 Т. 63 № 3 С. 346–355
Исследована возможность модифицирования лазерным отжигом свойств слоя (Ga, Mn)As, расположенного на поверхности квантово-размерной InGaAs/GaAs-структуры, с сохранением ее излучательных свойств. Для проведения исследований сочетанием методов МОС-гидридной эпитаксии и импульсного лазерного нанесения были изготовлены структуры с четырьмя квантовыми ямами InGaAs/GaAs, (содержание индия от 0.08 до 0.25), расположенными на различном расстоянии от слоя (Ga, Mn)As. В процессе исследований ...
Added: September 6, 2026
Denis K., Lavrukhina E. A., Journal of Physics: Conference Series 2021 Vol. 2103 Article 012201
A model of quasistationary states is constructed for the one-dimensional edge states propagating along the edge of a two-dimensional topological insulator based on HgTe/CdTe quantum well in the presence of magnetic barriers with finite transparency. The lifetimes of these quasistationary states are found analytically and numerically via different approaches including the solution of the stationary ...
Added: September 6, 2026
Denis K., Dorokhin M. V., Ved M. V. et al., Physical Review B: Condensed Matter and Materials Physics 2021 Vol. 104 No. 12 Article 125309
The GaAs/InGaAs quantum wells with a ferromagnetic δ〈Mn〉 layer in GaAs barrier demonstrate a set of interesting spin-related phenomena originating from Mn-hole interaction. One of such phenomena is a spin-memory effect which consists of Mn spin polarization induced by interaction with vicinity spin-polarized holes generated under the exposure by short circularly polarized light pulses. Here long Mn ...
Added: September 6, 2026
Denis K., Запруднов Н. А., Физика и техника полупроводников 2022 Т. 56 № 10 С. 973–978
Исследована динамика туннелирования и спина для дырочных состояний в двойной квантовой точке на основе GaAs при наличии сильного спин-орбитального взаимодействия и периодического электрического поля. Рассмотрены режимы туннелирования с переворотом спина в условиях "медленной" эволюции, при которой частота поля меньше остальных энергетических параметров стационарной части гамильтониана. Обнаружено, что в таких условиях туннелирование с переворотом спина может ...
Added: September 6, 2026
Denis K., Kalentyeva I. L., Vikhrova O. V. et al., Journal of Magnetism and Magnetic Materials 2022 Vol. 556 Article 169360
We have investigated the layers of the (Ga,Mn)As diluted magnetic semiconductor with the thickness in the range of 150 – 400 nm, which have been formed by the combination of the methods of a pulsed laser deposition and a post-growth pulsed laser annealing. It has been found that the laser annealing has a significant effect on the structural, ...
Added: September 6, 2026
Denis K., Konakov A. A., Lavrukhina E. A., Journal of Physics: Condensed Matter 2022 Vol. 34 Article 405302
A model of bound state formation from the delocalized edge states of 2D topological insulator (TI) is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of 1D quantum dot (QD) with variable number of bound states depending on barrier ...
Added: September 6, 2026
Denis K., Studenikin S. A., Physical Review B: Condensed Matter and Materials Physics 2022 Vol. 106 No. 19 Article 195414
Single-spin state evolution induced by the Landau-Zener-Stückelberg-Majorana (LZSM) interference in a Zeeman-spit four-level system in a periodically driven double quantum dot is studied theoretically by the Floquet stroboscopic method. An interplay between spin-conserving and spin-flip tunneling processes with the electric dipole spin resonance (EDSR) that is induced in an individual dot and enhanced by the ...
Added: September 6, 2026
Denis K., Лаврухина Е. А., Тележников А. В., Физика и техника полупроводников 2023 Т. 57 № 7 С. 551–554
Разработана модель локализованных состояний в двойной квантовой точке на крае топологического изолятора на основе квантовой ямы HgTe/CdTe, сформированной тремя магнитными барьерами. Исследованы особенности энергетического спектра, плотности вероятности и спиновой плотности квантовых состояний в зависимости от ориентации векторов намагниченности магнитных барьеров. Изучена локализация волновых функций слева и справа от точки антикроссинга в спектре и сделан вывод ...
Added: September 6, 2026
Pushkarev A., Khmelevskaia D., Matchenya I. et al., Nature 2026 Vol. 656 P. 80–85
Reaching lasing in electrically pumped microdevices based on solution-processed
semiconductors poses a substantial scientific and technological challenge. Halide
perovskites offer a promising platform for electrical injection1, as their optically
excited single-crystal cavities2–4 and predesigned5,6 or postprocessed microstructures7,8
have exhibited low lasing threshold. Indirect electrical pumping of a dual-cavity
perovskite laser was recently obtained9, using a well-established technological
concept of embedding a ...
Added: August 27, 2026
Ivanov K., Fedosov I. S., Войтович В. И. et al., Письма в Журнал технической физики 2026 Т. 52 № 12 С. 53–58
The paper presents the model of a microdisk laser – photonic crystal defect waveguide coupling system. Different finite dimensions of photonic crystals are taken into account. It is shown that coupling to a photonic crystal waveguide allows to increase the output power while maintain quality factor, which is not what a traditional coupling to a ...
Added: June 4, 2026
Fedosov I. S., Fominykh N., Kryzhanovskaya N. et al., Физика и техника полупроводников 2025 Т. 59 № 7 С. 388–391
The power and spectral characteristics of the radiation of a semiconductor microdisk laser with a diameter of 40 µm, monolithically integrated with an optical waveguide, have been studied. To reduce absorption in the waveguide, current pumping was used. In the light–current dependence, features associated with the onset of generation at a longer-wavelength resonance are observed. ...
Added: February 27, 2026
Fedosov I. S., Fominykh N., Kryzhanovskaya N. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2025 Vol. 18 No. 3.2 P. 200–204
We investigate the mode composition of a microdisk laser coupled with an optical waveguide. The output spectra of emission and light-current characteristic of the microlaser obtained from the output edge of the waveguide are studied. The microlaser demonstrates single-mode emission in consecutive ranges of injection currents, that are alternated with pronounced mode hoping. The intensity ...
Added: January 12, 2026
Anna Obraztsova, Ivan Makhov, Ivan Melnichenko et al., Journal of Lightwave Technology 2025 Vol. 43 No. 15 P. 7278–7284
Spectral characteristics of quantum dot (QD) microdisk lasers under spatially inhomogeneous optical excitation are
investigated. By varying the position and size of the continuous wave excitation spot over the laser cavity, we demonstrate controllable selection and switching of lasing whispering gallery modes (WGMs) at room temperature. Experimental results show that shifting the excitation spot across the ...
Added: September 5, 2025
Zubov F. I., Shernyakov Y. M., Gordeev N. Y. et al., Bulletin of the Lebedev Physics Institute 2025 Vol. 52 No. S1 P. S1–S6
Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky–Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134–153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated to be 45 cm–1 per quantum ...
Added: July 2, 2025
Kryzhanovskaya N., Moiseev E., Nadtochiy A. et al., , in: 2024 Asia Communications and Photonics Conference (ACP) and International Conference on Information Photonics and Optical Communications (IPOC).: IEEE, 2024. P. 1–4.
Semiconductor microdisk lasers developed using III-V epitaxial materials are widely studied during the last decade due to the bright prospectives coming from high quality circular cavity. The threshold and spectral characteristics of microlasers have been studied in sufficient detail, but the issue of the output power of such lasers has not been addressed, just as ...
Added: January 13, 2025
Makhov I., Komarov S., Fominykh N. et al., Optics Letters 2025 Vol. 50 No. 2 P. 387–390
Fabry–Perot (FP) lasers with a cavity length shorten down to 50 μm were investigated. One or two laser mirrors were
formed by focused ion beam etching. InGaAs quantum dots of high density were used as the laser active region. The
lasers operate in a pulsed regime up to at least 105°S. A comparison with lasers formed by ...
Added: January 9, 2025
A.S. Dragunova, N.V. Kryzhanovskaya, F. I. Zubov et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 1.2 P. 108–113
In this work, we study the characteristics of semiconductor microlasers based on the heterostructure with two coupled waveguides intended to improve heat dissipation in cw regime. We analysed total output optical loss of the microlasers, their spectral characteristics, output power, emission pattern and thermal resistance. We observed that the use of the principle of two ...
Added: July 3, 2023
Han L., Wang Z., Gordeev N. et al., Micromachines 2023 Vol. 14 No. 6 Article 1271
Semiconductor lasers have developed rapidly with the steady growth of the global laser
market. The use of semiconductor laser diodes is currently considered to be the most advanced
option for achieving the optimal combination of efficiency, energy consumption, and cost parameters
of high-power solid-state and fiber lasers. In this work, an approach for optical mode engineering
in planar waveguides ...
Added: June 27, 2023
Fedor Zubov, Moiseev E., Mikhail Maximov et al., Photonics 2023 Vol. 10 No. 3 Article 290
We report on half-ring lasers that are 100–200 um in diameter and are fabricated by cleaving
the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the
same wafer are compared. The active area of the microlasers is based on the quantum heterostructures
of mixed (0D/2D) dimensionality, referred to as quantum well-dots with ...
Added: June 27, 2023