Non-epitaxial perovskite polariton laser diode operating under direct current

Nature. 2026. Vol. 656. P. 80–85.

Pushkarev A., Khmelevskaia D., Matchenya I., Baryshev S., Sannikov D., Ekgardt A., Eduard I. Moiseev, Natalia V. Kryzhanovskaya, Alexey E. Zhukov, Krasnikov D., Marunchenko A., Yulin A., Nasibulin A., Lagoudakis P.

Reaching lasing in electrically pumped microdevices based on solution-processed
semiconductors poses a substantial scientific and technological challenge. Halide
perovskites offer a promising platform for electrical injection1, as their optically
excited single-crystal cavities2–4 and predesigned5,6 or postprocessed microstructures7,8
have exhibited low lasing threshold. Indirect electrical pumping of a dual-cavity
perovskite laser was recently obtained9, using a well-established technological
concept of embedding a high-luminosity light-emitting diode (LED) with a high-gain
medium into an integrated device10. Direct charge-carrier injection into a perovskite
LED excited by auxiliary short, optical pulses resulted in amplified spontaneous
emission (ASE)11. Other efforts for rational engineering of architectures12–15 that allow
for high charge-carrier density are still to demonstrate lasing. Here we develop a new
strategy for achieving direct electrical pumping of a perovskite laser. We integrate
a solution-grown CsPbBr3 microplate with chemically inert single-walled carbon
nanotube (SWCNT) electrodes and embed them into an optical microcavity. By cooling
the microdevice down to 8 K at a constant current, a perovskite p–i–n diode is formed
that facilitates a balanced carrier injection at high current densities. The perovskite
microcavity diode operates in the strong coupling regime, exhibiting polariton lasing
under a direct current of 65 μA.

Keywords: polariton, perovskite, перовскиты, полупроводниковые лазеры, Diode laser, поляритоны

Publication based on the results of: Study of disk microlasers and photonic integrated circuits for optical switching and sensing elements (2025)