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Optically Pumped Terahertz Radiation Sources Based on Impurity Carrier Transitions in Quantum Wells

Ch. 2. P. 21–38.
Firsov D., Makhov I., Panevin V., Sarkisyan H., Vorobjev L.

A review of the results of studies of terahertz radiation associated with impurity electron transitions in n-doped GaAs/AlGaAs quantum wells under conditions of interband optical excitation of nonequilibrium charge carriers is presented.The principles of radiation generation and methods of controlling its intensity are described: a decrease in the lifetime of electrons at impurity levels due to stimulated interband radiation and the introduction of a compensating acceptor impurity. 

Language: English
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Keywords: квантовые ямытерагерцовое излучение terahertz radiationimpurityпримесиquantum well
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)

In book

Proceedings of the 9th International Symposium OPTICS-2022
Springer, 2022.
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