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Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures

St. Petersburg Polytechnical University Journal: Physics and Mathematics. 2025. Vol. 18. No. 3.1. P. 125–128.
D.A. Masyutin, A.A. Rudnev, E.I. Moiseev, Vainilovich A. G., Lutsenko E. V., Tsatsulnikov A. F., Sakharov A. V., N.V. Kryzhanovskaya, A.E. Zhukov

In this work, we present results on high-temperature operation microdisk lasers with an active region based on InGaN/GaN quantum wells. The diameter of the microdisks was 5 μm. The photoluminescence spectra measured in the temperature range from 25 °С to 100 °С. The temperature stability lasing is demonstrated.

Research target: Physics
Language: English
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Keywords: WGMGaNInGaN/GaN quantum wellsmicrodisk resonatorмикродискиGaNМШГInGaN/GaN квантовые ямы
Publication based on the results of:
Проектирование, синтез и исследование гетероструктур на основе широкозонных III-N материалов и микролазеров на основе высокодобротных резонаторов (2026)
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