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October 19, 2026
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Defect-Assisted Recombination Accelerates Spin Depolarization in Monolayer CrSBr

The Journal of Physical Chemistry Letters. 2026. Vol. 17. No. 40. P. 11338–11345.
Ma C., Lu H., Vasenko A., Chulkov E., Yan D., Long R.

Defect-controlled carrier charge and spin dynamics are central to the functionality of two-dimensional magnetic semiconductors. Here, ferromagnetic monolayer CrSBr with bromine vacancies is used to reveal how intrinsic defects couple nonradiative recombination to spin depolarization. Time-dependent density functional theory combined with nonadiabatic molecular dynamics including noncollinear spin shows that bromine vacancy introduces a localized, spin-polarized in-gap hole-trap state that reconstructs the recombination pathway. Unlike direct interband recombination in pristine CrSBr, the defective system follows a two-step mechanism involving hole trapping and subsequent fast defect-assisted recombination, shortening the carrier lifetime from ∼1.38 ns to ∼0.20 ns. The characteristic time for the decay of the population-weighted spin-polarization is correspondingly shortened, showing that the loss of spin polarization is closely coupled to defect-mediated charge relaxation. These results establish a microscopic link among defect localization, carrier recombination, and spin-polarization decay in two-dimensional magnetic semiconductors.

Research target: Physics
Language: English
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Keywords: дефектыdefectsrecombinationTD-DFTтеория функционала плотностиБезызлучательная рекомбинацияmagnetic semiconductorsspin depolarizationмагнитные полупроводникиспиновая деполяризация
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Quantum devices and technologies of the new generation (2025)
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