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Regular version of the site

Book chapter

Coupled TCAD-SPICE Simulation of Parasitic BJT Effect on SOI CMOS SRAM SEU

P. 312-315.

Single event upsets (SEU) produced by heavy ions in SOI CMOS SRAM cells were simulated using a mixed-mode approach, that is, two-dimensional semiconductor device simulation by TCAD tool coupled with circuit SPICE simulator. The effects of parasitic BJT and particle strike position on the SOI CMOS SRAM cells upset for transistor length scaling from 0.25 um to 65nm are presented.

In book

Edited by: V. Hahanov. Kharkov: Kharkov national university of radioelectronics, 2013.