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Coupled TCAD-SPICE Simulation of Parasitic BJT Effect on SOI CMOS SRAM SEU

P. 312–315.
Petrosyants K. O., Kharitonov I. A., Popov D.

Single event upsets (SEU) produced by heavy ions in SOI CMOS SRAM cells were simulated using a mixed-mode approach, that is, two-dimensional semiconductor device simulation by TCAD tool coupled with circuit SPICE simulator. The effects of parasitic BJT and particle strike position on the SOI CMOS SRAM cells upset for transistor length scaling from 0.25 um to 65nm are presented.

Language: English
Full text
Keywords: TCADSPICEМОП-транзисторMOSFETSOITCADКНИHSPICEion strikeparasitic bipolar transistorsingle eventПаразитный биполярный транзистородиночный сбой
Publication based on the results of:
Development of the methods for multilevel research and simulation of modern temperature and radiation hardened microelectronic components from material level to circuit level (2013)

In book

Proceedings of IEEE East-West Design & Test Symposium (EWDTS’13)
Kharkov: Kharkov national university of radioelectronics, 2013.
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Added: March 24, 2020
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