SiGe HBT Performance Modeling after Proton Radiation Exposure
The effects of proton irradiation on SiGe heterojunction bipolar transistor (HBT) are investigated using Synopsys/ISE TCAD tool. To account for the impact of proton irradiation models for carrier lifetime degradation under irradiation are included in the program. The results of modeling the impact of protons of different energies are presented. For SiGe HBT increase in the base current for low-energy protons is more intense than for high-energy protons. We also present the simulation results of SiGe HBT dc and ac performance after proton exposure. The simulation results are in good agreement with experimental data.