Proceedings of IEEE East-West Design & Test Symposium (EWDTS’12)
The main target of the IEEE East-West Design & Test Symposium (EWDTS-2012) is to exchange experiences between scientists and technologies of Eastern and Western Europe, as well as North America and other parts of the world, in the field of design, design automation and test of electronic circuits and systems. EWDTS’11 covers the following topics:
• Analog, Mixed-Signal and RF Test
• Analysis and Optimization
• EDA Tools for Design and Test
• Failure Analysis, Defect and Fault
• Modeling & Fault Simulation
• Power Issues in Testing
• Reliability of Digital Systems
• Thermal, Timing and Electrostatic Analysis of SoCs and Systems on Board
The effects of proton irradiation on SiGe heterojunction bipolar transistor (HBT) are investigated using Synopsys/ISE TCAD tool. To account for the impact of proton irradiation models for carrier lifetime degradation under irradiation are included in the program. The results of modeling the impact of protons of different energies are presented. For SiGe HBT increase in the base current for low-energy protons is more intense than for high-energy protons. We also present the simulation results of SiGe HBT dc and ac performance after proton exposure. The simulation results are in good agreement with experimental data.
Automated electro-thermal analysis is realized in the last version of Mentor Graphics PCB Design System. The special software tool AETA is developed and integrated into the Expedition Enterprise PCB Design System to automate the process of power-temperature traffic between electrical and thermal simulators. Furthermore AETA provides the graphical user interface and the possibility to use the different versions of Mentor Graphics software.
An EKV-RAD macromodel for SOI/SOS MOSFET with account for radiation effects is developed using a subcircuit approach. As an addition to the standard version of the EKV model 1) radiation dependencies of parameters VTO, GAMMA, KP, E0 are introduced and 2) additional circuit elements to account for floating-body effects and radiation-induced leakage currents under static and dynamic radiation influence are connected. Maximum simulation error is 5–7% in the dose range up to 1 Mrad. It is shown that EKV-RAD spends less CPU time by 15–30% for analog and 40–50% for digital SOI/SOS CMOS circuits simulations compared to BSIMSOI-RAD model.
CAD sybsystem for logi-thermal analysis of the digital circuits is presented. Logical circuits are described by VHDL language. Thermal regimes are calculated by electro-thermal analogy method. For the calculation of the thermal resistances and capacitances the thermal 3D simulator Overheat-IC based on semi-analytical solution of three-dimensional heat conduction equation is used. For simultaneous calculation of logical and thermal characteristics of IC analog and mixed-signal simulator Questa ADMS is used.