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Regular version of the site

Book chapter

1.55 μm range edge-emitting laser diodes based on InGaAs/InGaAlAs superlattice and InGaAs quantum wells

P. 012072-1-012072-5.
Zhukov A. E.

Two laser heterostructures with active region based on seven InGaAs quantum wells
and on InGaAs/InGaAlAs superlattice were grown on InP substrates by molecular beam
epitaxy. Both active regions were designed for vertical-cavity surface-emitting lasers of 1535-
1565 nm spectral range and had total thickness about 80-90 nm. Characteristics of edgeemitting
laser diodes fabricated from grown laser heterostructures were studied and compared.





In book

Vol. 1695: 7th International School and Conference "Saint Petersburg OPEN 2020": Optoelectronics, Photonics, Engineering and Nanostructures April 27-30, 2020, Saint Petersburg, Russian Federation. Bristol: Institute of Physics Publishing (IOP), 2020.