1.55 μm range edge-emitting laser diodes based on InGaAs/InGaAlAs superlattice and InGaAs quantum wells
Two laser heterostructures with active region based on seven InGaAs quantum wells
and on InGaAs/InGaAlAs superlattice were grown on InP substrates by molecular beam
epitaxy. Both active regions were designed for vertical-cavity surface-emitting lasers of 1535-
1565 nm spectral range and had total thickness about 80-90 nm. Characteristics of edgeemitting
laser diodes fabricated from grown laser heterostructures were studied and compared.