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Создание «черного кремния» для солнечных элементов на основе структур с Ge(Si) cсамоформирующимися островками
С. 815–816.
Шалеев М. В., Новиков А. В., Юрасов Д. В., Байдакова Н. А., Морозова Е. Е., Скороходов Е. Е., Verbus V. A., Ota Y., Kurokawa Y., Usami N.
An original method has been developed for nanotexturing the surface of crystalline silicon, based on the use of GeSi self-focusing nanoislands as a mask for anisotropic etching of Si. The developed method is characterized by a small thickness of the removed silicon and allows in a wide spectral range to significantly reduce the reflection from the silicon surface and increase the absorption of radiation in the near and middle IR range. This makes it promising to use this method of surface nanotexturing to increase the efficiency of solar cells based on thin crystalline silicon wafers
In book
Т. 2: секция 3. , Н. Новгород: Нижегородский государственный университет им. Н.И. Лобачевского, 2018.
Zaman N., Li Y., Zheng T. et al., Journal of Materials Chemistry A 2026 Vol. 14 No. 25 P. 15971–15983
Interface engineering plays a critical role in determining the performance of lead sulfide (PbS) colloidal quantum dot (CQD) solar cells. Defects and surface states at the PbS–electron transport layer (ETL) interface critically govern charge extraction and recombination processes. ZnMgO nanoparticles are widely employed as ETLs due to their high electron mobility and facile synthesis; however, ...
Added: March 1, 2026
Shandyba N. A., Eremenko M. M., Dukhan D. D. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2025 Vol. 18 No. 3.1 P. 19–22
This work demonstrates, for the first time, the selective formation of ordered arrays of vertical GaAs nanowires on Si(111) with a native oxide layer using a two-step pre-treatment of the substrate surface with a focused Ga-ion beam. Based on our previous studies, we show that modifying the substrate through a two-step protocol — first applying ...
Added: December 11, 2025
Pavlova T., Shevlyuga V. M., Physical Chemistry Chemical Physics 2025 Vol. 27 No. 43 P. 23421–23427
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr_3 molecule, which fully dissociates on the surface at 77 K. We observed diffusion of P atoms both along and across the rows of Si dimers. To support the observation ...
Added: October 20, 2025
T. V. Pavlova, Journal of Chemical Physics 2025 Vol. 162 No. 19 P. 194701–194701
Added: June 27, 2025
Власенко Л. С., Fedosov I. S., Письма в Журнал технической физики 2024 Т. 50 № 9 С. 3–5
Electron paramagnetic resonance spectra of centers localized on (111), (110), and (100) oriented surface of silicon wafers were observed and studied using spin dependent microwave photoconductivity. The wafers were not subjected to high temperature oxidization, but oxidized on air at room temperature. The optimal experimental conditions for detection the surface recombination centers, having the sensitivity ...
Added: May 12, 2025
Fu S., Sun N., Hu S. et al., Energy and Environmental Sciences 2025 Vol. 18 No. 11 P. 5503–5510
Substantial VOC loss and halide segregation in wide-bandgap (WBG) perovskite sub-cells pose significant challenges for advancing all-perovskite tandem solar cells (APTSCs). Regarding this, one of the most impactful developments is the application of hole-selective self-assembled monolayers (SAMs), leading to the advancement in APTSC technology. However, SAMs with poor polar-solvent resistance would be inevitably delaminated from ...
Added: May 8, 2025
Tatarin S., Smirnov D., Taydakov I. et al., Dalton Transactions 2023 Vol. 52 No. 19 P. 6435–6450
The synthesis, structure, optical and redox properties as well as photovoltaic studies of iridium(III) complexes with cyclometalated 2-arylbenzimidazoles decorated with various polyaromatic fragments and an ancillary aromatic β-diketone are reported. Despite the strong preference of the iridium(III) ion to form bis- or tris-cyclometalated complexes in which the metal participates in five-membered metallacycles, the cyclometalation of ...
Added: September 16, 2024
Tatarin S., Meshcheriakova E., Kozyukhin S. et al., Dalton Transactions 2023 Vol. 52 No. 44 P. 16261–16275
A judicious selection of substituents in cyclometalating 2-arylbenzimidazoles and an ancillary aromatic 1,3-diketone enabled the creation of heteroleptic iridium(III) complexes demonstrating strong light absorption up to 500 nm (ε ≈ 10 000–12 000 M−1 cm−1). The complexes, which were studied by various spectroscopic techniques, single-crystal X-ray diffraction and cyclic voltammetry, displayed tunable absorption maxima depending on the ...
Added: September 16, 2024
Pavlova T., Shevlyuga V. M., Journal of Chemical Physics 2024 Vol. 160 No. 5 Article 054701
For the most precise incorporation of single impurities in silicon, which is utilized to create quantum devices, a monolayer of adatoms on the Si(100) surface and a dopant-containing molecule are used. Here we studied the interaction of a phosphorus tribromide with a chlorine monolayer with mono- and bivacancies in a scanning tunneling microscope (STM) at ...
Added: July 2, 2024
Гридчин В. О., Сошников И. П., Резник Р. Р. et al., Письма в Журнал технической физики 2023 Т. 49 № 5 С. 32–35
The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor ...
Added: May 20, 2024
Gridchin V. O., Komarov S. D., Soshnikov I. P. et al., Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques 2024 Vol. 18 No. 2 P. 408–412
In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are investigated. It is found that the formation of InGaN nanowires with a core–shell structure occurs when the III/V flux ratio (taking into account the In-incorporation ...
Added: May 20, 2024
Мельниченко И. А., Komarov S., Dragunova A. et al., Письма в Журнал технической физики 2024 Т. 50 № 5 С. 3–6
С помощью конфокальной оптической микроскопии и спектроскопии микрофотолюминесценции исследованы субмикронные нановключения InAsxP1-x/InP, сформированные методом селективного эпитаксиального роста в кремнии с использованием металлоорганической газофазной эпитаксии и расплавленной капли элемента III группы. Исследовано влияние расстояния между нановключениями на интенсивность фотолюминесценции, получены температурные зависимости фотолюминесценции в диапазоне 77-290 K. При комнатной температуре получено излучение в спектральном диапазоне 1.2 ...
Added: February 13, 2024
T. V. Pavlova, V. M. Shevlyuga, Journal of Chemical Physics 2023 Vol. 159 No. 21 Article 214701
The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and then exposed to PBr3 directly in the STM chamber. Uncharged DBs rarely react with molecules. On the contrary, almost all positively charged DBs were filled with molecule fragments. ...
Added: January 29, 2024
Elnaggar M., Mumyatov A., Emelianov N. et al., SUSTAINABLE ENERGY & FUELS 2023 Vol. 7 No. 16 P. 3893–3901
In this contribution, we report the synthesis and structural characterization of a series of fullerene derivatives and their further systematic investigation as promising ETL (electron transport layer) materials in p–i–n perovskite solar cells (PSCs). The devices fabricated using a set of fullerene derivatives F1–F6 demonstrated high power conversion efficiencies (PCEs), up to 19.0%, compared to ...
Added: January 18, 2024