In this paper we analyze details of bipolar transistors and MOSFETs electrical characteristics measurement in the presence of neutron, electron and gamma irradiation. An automated measurement subsystem is developed with its core being a measurement kernel comprising a set of measurement instrumentation as well as methods of measurement and data processing for irradiated transistors of various types. Provided are several examples of the subsystem application to BJTs and MOSFETs radiation hardness investigation as well as extraction of their SPICE model parameters for circuit design.
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.