• A
  • A
  • A
  • ABC
  • ABC
  • ABC
  • А
  • А
  • А
  • А
  • А
Regular version of the site

Book chapter

45nm High-k MOSFETs on Bulk Silicon and SOI Substrates Modeling to Account for Total Dose Effects

P. 1-3.

TID response of 45nm high-k bulk and SOI MOSFETs was of simulated. The set of new physical semi-empirical models accounting for TID dependences trap densities, carrier mobilities, carrier lifetime was developed and introduced into TCAD. Acceptable agreement between simulated results and experimental data was achieved.

In book

45nm High-k MOSFETs on Bulk Silicon and SOI Substrates Modeling to Account for Total Dose Effects
Jinshun B. Institute of Microelectronics of Chinese Academy of Sciences, 2017.