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July 24, 2026
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Physicist Nina Dzhanayeva, recipient of a Vladimir Potanin Foundation scholarship, focuses her research on nanophotonics. In this interview for the HSE Young Scientists project, she discusses nanowells, scientific intuition, and how physics can help in making frangipane cream puffs.
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July 20, 2026
‘Science Is Universal-It Knows No Borders
Fuad Aleskerov, Tenured Professor and Director of the International Centre of Decision Choice and Analysis at HSE University, together with his colleagues, has developed methods of network analysis in bibliometrics that have made it possible to identify patterns in the appearance and citation of publications in academic journals, as well as their influence on each other. When one or a number of studies are frequently cited by a wide range of journals, this is an indicator that the research is of high quality. By contrast, extensive cross-citation within a limited group of journals increases the likelihood of identifying a network of predatory publications.

 

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General Approach to TCAD Simulation of BJT/HBT and MOSFET Structures after Proton Irradiation

P. 1–3.
Petrosyants K. O., Popov D., Kozhukhov M.

Novel TСAD-rad models for the bipolar and MOSFET structures have been developed taking into account the effect of proton radiation on the basic physical parameters (τ, μ, S, Nit). The simulation results are in good agreement with experimental data.

Language: English
Full text
Keywords: TCADBJTрадиационные эффектыradiation effectsМОП-транзисторыMOSFETTCADproton irradiationпротоныБиполярные транзисторы

In book

2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017)
2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017)
Jinshun B. Institute of Microelectronics of Chinese Academy of Sciences, 2017.
Similar publications
TCAD-SPICE Analysis of SEU and Reliability in Space-Grade SRAM from 90 nm to 28 nm
Petrosyants K. O., Kharitonov I. A., Denis S. Silkin, , in: Proceedings of the Future Technologies Conference (FTC) 2025, Volume 3Vol. 3.: Springer Publishing Company, 2026. P. 171–184.
The study presents the results of developing a combined TCAD-SPICE model of the behavior of CMOS memory cells under space impact conditions. The study analyzes both degradation from prolonged cosmic radiation and single-event upsets (SEUs) caused by high-energy particle strikes, which can flip memory states in space-based electronics. The dependence of SEU hardness on cell ...
Added: April 7, 2026
TCAD Electrothermal Analysis of 3D GAAFET Structures for Future VLSI Circuits
Konstantin O. Petrosyants, Denis S. Silkin, Dmitriy A. Popov, , in: Proceedings of the Future Technologies Conference (FTC) 2024, Volume 3. (LNNS, volume 1156).: Switzerland: Springer, 2024. P. 643–652.
Added: November 6, 2025
Сравнительный анализ подходов к определению разброса температурно-зависимых параметров SPICE-моделей МОП-транзисторов
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Taking into account the variation in the parameters of SPICE models of semiconductor components in the circuit modeling of electronic components is necessary for a more accurate assessment of the limits of their operability during the design of electronic equipment. This is especially important for equipment designed to operate in conditions other than normal or ...
Added: September 16, 2025
Моделирование субмикронных МОП-транзисторов с использованием нейронных сетей
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В работе рассматривается возможность применения методов машинного обучения для моделирования вольт-амперных характеристик МОП-транзистора. Приведено обоснование замены приборно-технологического моделирования на модели полупроводниковых компонентов на базе нейронных сетей (ML-TCAD). Для иллюстрации подхода разработана модель для 130-нм МОП-транзистора и проведен расчет входных вольт-амперных характеристик (ВАХ). ...
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Physical and mathematical model of a transistor with static induction makes it possible to calculate the main current-voltage characteristics and to analyze the design of devices for static mode in bipolar operation of transistor, and also to understand the possibilities of crystal design improvement. However, this model does not allow analyzing the operation of devices ...
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The paper considers qualitative estimations of CMOS SRAM Cells sensitivity to SEU performed for technological nodes varying from 90 nm up to 28 nm using verified TCAD-SPICE software tools and models. The process and results of simulations have been presented. The estimations of CMOS SRAM cells hardness to SEU have been confirmed using SRAM measurement ...
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Особенности TCAD-SPICE-моделирования удара заряженной частицы в 6T-ячейку статической памяти, изготовленную по КМОП-технологии с проектными нормами 28 нм
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Added: January 11, 2024
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Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
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K.O. Petrosyants, D.S. Silkin, D.A. Popov et al., , in: Proceedings of 2022 IEEE Moscow Workshop on Electronic and Networking Technologies (MWENT).: M.: IEEE, 2022. P. 1–4.
Added: July 13, 2022
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The paper highlights RAD-THERM-AGING versions of TCAD and SPICE models developed for BiCMOS VLSI components with submicron and nanometer sizes, taking into account various types of radiation effects, temperatures in the wide range of -260...+300°C and aging during long-term operation. ...
Added: July 7, 2022
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Added: November 30, 2021
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Added: November 5, 2021
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The possibilities of determining the SPICE model parameters in an extended temperature range were investigated using the three most common commercial extractors IC-CAP, MBP and BSIMProPlus. Comparative estimates of the efficiency of extractors are given on the example of calculating MOSFETs I–V characteristic taking into account the temperatures up to +300°C. ...
Added: November 5, 2021
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Petrosyants K. O., Силкин Д. С., Popov D., В кн.: Проблемы разработки перспективных микро- и наноэлектронных систем – 2021 (МЭС-2021)Вып. 4.: М.: ИППМ РАН, 2021. Гл. 86 С. 2–6.
Added: October 31, 2021
Протон
Mosharev P., Ишханов Б. С., Исупов Е. Л. et al., М.: КДУ, Университетская книга, 2018.
Учебное пособие «Протон» написано на основе курса лекций проф. Б. С. Ишханова «Нуклеосинтез» для студентов 5 курса физического факультета МГУ. Рассматриваются актуальные вопросы образования протонов во Вселенной, характеристики протона, свойства антипротонов, связанные состояния протона, антипротона, возможные каналы распада протона. Пособие будет полезно при проведении семинарских занятий и для самостоятельной работы студентов физических специальностей. ...
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Wang Y., Liu F., Li B. et al., IEEE Transactions on Nuclear Science 2021 Vol. 68 No. 8 P. 1660–1667
The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- μm double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a DSOI static random access memory (SRAM). The physical mechanism of single-event effect ...
Added: September 26, 2021
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