Book chapter
Моделирование задержек в межсоединениях ИС с учётом температурных эффектов
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In this work, virtual testing of submicron SOI CMOS reference voltage source integrated circuit was conducted with regard to elevated temperature in the range up to +300°C. Based on simulation results its temperature tolerance figures were estimated.
In this work, results of electrical measurements and their analysis are demonstrated for a small-scale 180-nm SOI CMOS technology in the extended temperature range (up to 300°C). Comparison with high temperature electrical characteristics of 0.5 um technology is drawn. Modified model for SOI MOSFETs, based on BSIMSOI model is developed and model parameters are extracted for SPICE simulation of IC blocks. Results of subsequent SPICE simulation of analog and digital circuit blocks characteristics are presented. The potential feasibility of using small-scale SOI CMOS technology (180-nm) for extended temperature range integrated circuits (ICs) is demonstrated.
We strengthen the convergence result in our paper, ibid. 5, No. 6, 1059-1098 (1999; Zbl 0983.62049), proving the local asymptotic mixed normality property in one of the 11 cases considered in that paper.
Results are presented of investigations of the temperature dependence of the frequency of the surface magnetostatic waves in the cubic ferrite film—permanent magnet system. Analysis made of the conditions of thermal stability of the frequency and the essential requirements are proposed for the parameters of the film and the magnet. The results show that the best thermally compensating properties are typical of the films with the orientation {110} and magnets with positive temperature coefficients of spontaneous magnetisation. The experimental investigations were carried out on films of iron-yttrium garnet and magnets of (NdDy Tb Ho Gd) (Fe Co) В alloys. The temperature dependences of the frequencies from the longwave part of the spectrum were characterised by non-monotonic sections. At the maximum of the dependences, the temperature coefficients showed the zero value. The highest thermally stable frequency, 4.6 GHz, was recorded in the field with a strength of 1070 Oe and a temperature coefficients of 0.3 Oe/°C.
It is shown that it is necessary to take into account the radiation influence on CMOS IC’s characteristics in the process of waveforms distortions analysis in satellite communication PCB traces. The special SPICE models for CMOS transistors with radiation dependent model parameters were used for this purpose. The simulation results showed that total dose results to reducing of IC output current, increasing of IC output voltage rise/fall times and to reduction of parasitic oscillations in PCB traces. The influence of irradiated P- channel MOSFET on transient characteristics is more important than N-MOSFET’s influence because of summarized mobility reduction and threshold voltage value increasing.
An efficient methodology of electro-thermal design of smart power semiconductor
devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for
2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and
high power elements, temperature sensors, IC chips simulation are considered