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Regular version of the site

Book chapter

SOI/SOS MOSFET Universal Compact SPICE Model with Account for Radiation Effects

P. 305-308.

Universal SPICE model for submicron SOI/SOS
MOSFETs based on BSIMSOI and EKV-SOI platforms with
account for total ionizing dose-induced effects (TID), pulsed
radiation effects, single events is presented. A special subcircuit
consisting of parasitic transistors for sidewall and backgate
leakage currents and other elements is connected to the standard
SPICE model. In addition, the radiation-dependent parameters
are described by physically based mathematical equations. Model
parameter extraction methodology is described. Examples of radhard
SOI/SOS CMOS circuits simulation are presented.