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✖Silicon single crystals were studied by X-ray topo-tomography using laboratory sources. Experimental set up is described. Three-dimensional distribution of defect regions in the crystal were obtained.
Today there are the real importance in global management of quality for light production`s enterprises. The article describes the way of installation of the composite indicator of enterprise` s operation`s effectiveness in situation of concrete organization, where the way of production activity and specific types of defects are observed. At the end of researches the recommendations of economic results improvements and promoting competitiveness are published. It can be used for all light production`s enterprises for optimization of product quality`s controlling system
At present particular attention is given to techniques which allow the monitoring of single layer and multilayer thin film materials directly during their formation - in-situ methods. Application of these methods helps to ensure a film with desired characteristics, allowing quickly adjust process conditions. The paper describes the possibilities of the in-situ X-ray reflectivity to determine the parameters of nanoscale films in real time of their formation. Experimental results on the magnetron deposition of nanoscale Si films and other materials on silicon substrates are presented.
There are the real importance in global management of quality for light production`s enterprises. The article describes the way of installation of the composite indicator of enterprise` s operation`s effectiveness in situation of concrete organization, where the way of production activity and specific types of defects are observed. At the end of researches the recommendations of economic results improvements and promoting competitiveness are published. It can be used for all light production`s enterprises for optimization of product quality`s controlling system
The structure of silicon crystals implanted with protons was studied by methods of high-resolution X-ray diffraction . The distribution of strain in the disturbed layers was analyzed.
The effect of stress of different signs on the processes of radiation defect formation in the crystalline silicon is presented . The calculation of the state of thin circular plate with the surface layer under the deformation is shown as well.
