Труды XXIII Международной конференции "Радиационная физика твердого тела" (Севастополь, 8 июля - 13 июля 2013)
The structure of silicon crystals implanted with protons was studied by methods of high-resolution X-ray diffraction . The distribution of strain in the disturbed layers was analyzed.
Silicon single crystals were studied by X-ray topo-tomography using laboratory sources. Experimental set up is described. Three-dimensional distribution of defect regions in the crystal were obtained.
In work the assessment of numerical stability of the computing reduced scheme based on methods of Euler is carried out. In article the condition of numerical stability of the reducing scheme which proves possibility of use of this scheme in practice was received. By means of a test example calculation for the developed reduced scheme with identical result, but accelerated in comparison by traditional computing schemes is shown.