The main content of the training manual is:consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors, Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients), the effect of nuclear reactions and fast annealing on the parameters of transistors is considered; Classification of radiation effects in bipolar transistors is given.
The main content of the training manual is:consideration of issues of interaction of the main types of radiation with a solid, structures of specific point and group radiation defects in silicon, germanium and gallium arsenide are considered, Theoretical prerequisites for the calculation of the change in the basic electro-physical parameters of semiconductors are considered; a summary of the currently available empirical dependences of the main parameters of semiconductors on the integral irradiation flux by various types of radiation exposure is given.
Experiments revealed higher surface radiation resistance of the sweating aluminium-lithium alloys under long-term ion bombardment, so that it can be recommended for use in stressed sections of thermonuclear synthesis equipment.
Electronic equipment of spacecraft is exposed to ionizing radiation of outer space, which is another reason for failure. Currently accepted to evaluate separately the reliability of electronic equipment and its radiation resistance, despite the fact that these phenomena are interrelated. The aim of the article is to estimate effects of ionizing radiation on the reliability of microwave devices, namely, the probability of failure-free operation of a microwave amplifier.
The probability of device failure model Q(t) for active lifetime is constructed as a product of the probabilities of failure Q1(t) - the probability of device failure due to set the total ionizing dose, Q2(t) - probability of failure of the device in the absence of exposure to ionizing radiation, Q3(t) - the probability of a single effect event. Probabilities Q2(t) and Q3(t) are valued at current normative documents. Probability Q1(t) is calculated based on probabilistic and physical models.
Research shows that, despite the high radiation resistance of microwave devices used in electronic equipment of spacecraft, when the long lifetime is required the low intensity radiation will have a tangible impact on the probability of failure. And that should be considered when designing equipment.