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Membrane-integrated planar Schottky diodes for waveguide mm-wave detectors
СВЧ-техника и телекоммуникационные технологии, Россия. 2021. No. 3. P. 34–34.
We report on the technology of membrane-integrated planar Schottky diodes intended for use as part of waveguide mm-Wave detectors. The diode fabrication process mainly relies on selective etching of GaAs enabling the implementation of both a metallic suspended bridge terminated by a microscale Schottky contact to n-GaAs and a 140-200 μm thick SI-GaAs membrane underneath. The membrane acts as a quarter-wave backshort, once the diode chip is installed into the waveguide detector block and its back surface is metalized. The diode is fabricated between the arms of a bow-tie antenna coupled to a rectangular waveguide. EM modeling and preliminary performance tests suggest that the technology developed is suitable for the implementation of waveguide detectors operational within 100-180 GHz.
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Edward R. Rzaev, Aleksandr Y. Romanov, Andrey M. Sukhov, IEEE Access 2026
This work presents a hierarchy of strictly local fault-tolerant routing algorithms for 3D mesh networks-on-chip, culminating in an algorithm that combines a live-neighbor selection rule with a bounded single-hop rollback mechanism. The proposed algorithms operate exclusively on immediate neighbor information, maintain O(1) per hop complexity, and require no global topology knowledge, additional virtual channels, or ...
Added: July 23, 2026
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2026 International Russian Smart Industry Conference (SmartIndustryCon) Copyright and Reprint Permission: Abstracting is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy ...
Added: July 13, 2026
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Added: July 8, 2026
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K. O. Petrosyants, I. A. Kharitonov, Tegin M. S., Russian Microelectronics 2025 Vol. 54 No. 7 P. 743–750
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on and off significantly reduce the reliability of power circuits. The widely used electrothermal modeling
approaches for thermal circuits have a number of disadvantages: the use of interconnected Spice simulators
and the numerical 3D thermal field modeling tool requires a detailed description of 3D ...
Added: July 7, 2026
Singapore: Springer, 2025.
This book presents the proceedings of CPESE 2025, the 12th International Conference on Power and Energy Systems Engineering, to be held from 12 to 14 September, 2025 at Kyushu University, Fukuoka, Japan.
This proceedings following a thorough peer-review process conducted in the light of originality, innovation, applicability, technical merit, organization and writing, and relevance to the ...
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Ivchenko A., Дворкович А. В., Телекоммуникации 2020 Т. 12 С. 2–11
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Added: June 27, 2026
Springer, 2026.
The book presents the proceedings of the 13th International Conference on Frontiers of Intelligent Computing: Theory and Applications (FICTA 2024), held at Intelligent Systems Research Group (ISRG), London Metropolitan University, London, United Kingdom, during June 6–7, 2025. Researchers, scientists, engineers and practitioners exchange new ideas and experiences in the domain of intelligent computing theories with ...
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Intrabody communication (IBC) channels offer physiological diversity that can be leveraged for passive biometric identification in wearable devices. Recent reports of over 99 per cent identification accuracy have frequently resulted from data leakage, where samples from the same subject are seen in both training and evaluation, yielding inflated and unreliable metrics. In this work, we ...
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Исследованы инжекционные полупроводниковые микролазеры с кольцевым резонатором радиусом 15 мкм с несимметричным расположением внутреннего отверстия резонатора. Показано, что асимметрия обеспечивает формирование в диаграмме направленности двух лепестков излучения, разориентированных на 50° относительно оси смещения внутреннего отверстия. Измеренная добротность резонаторов сопоставима с добротностью дисковых резонаторов и находится на уровне ∼ 10^6. ...
Added: May 18, 2026
Rathish S., Andrey S. Vasenko, Thazhathenair A. et al., The Journal of Physical Chemistry Letters 2026 Vol. 17 No. 18 P. 5386–5394
We demonstrate and rationalize the effect of Au nanoparticles (NPs) on the hierarchical g-C3N4/CeO2 heterojunction. g-C3N4/CeO2 decorated with monodispersed plasmonic Au NPs was synthesized. Detailed analyses showed that CeO2 nanocubes and monodispersed Au NPs were evenly distributed over the 2D g-C3N4 surface, forming a robust interface enriched with abundant active sites. The structure enabled efficient separation of photogenerated charge ...
Added: May 16, 2026
Paul R., Das A., Sharma N. et al., Colloids and Surfaces A: Physicochemical and Engineering Aspects 2026 Vol. 728 Article 138830
Niobium-doped TiO2 (Nb-TiO2), demonstrates dual functionality as an efficient photocatalyst for dye degradation and a promising photoelectrocatalyst for water oxidation. Nb incorporation via a facile hydrothermal method was confirmed by XRD (Rietveld refinement), XPS, TEM, FT-IR, Raman, and BET analyses, indicating successful lattice doping and structural modification. Photocatalytic dye degradation experiments were conducted using a model ...
Added: May 16, 2026
Balakirev S., Alexey Nadtochiy, Natalia Kryzhanovskaya et al., Journal of Luminescence 2024 Vol. 272 Article 120621
The results of a study of the optical properties of self-assembled InAs/GaAs (001) quantum dots (QDs) overgrown under different arsenic pressures, obtained using photoluminescence (PL) and PL excitation spectroscopy, are presented. If the arsenic pressure during overgrowth is low (2.5·10−6 Pa), a series of pronounced QD-related peaks is observed in the 77-K PL spectrum over a ...
Added: May 20, 2024
Shurakov A., Kaurova N., Belikov I. et al., / Series Physics "arxiv.org". 2022.
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Added: September 15, 2023
Shurakov A., Mikhalev P., Михайлов Д. М. et al., Microelectronic Engineering 2018 Vol. 195 P. 26–31
In this paper we report on the results of the study of the Ti/Au
/ n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of
terahertz radiation. The two types of the PSD devices were compared having
either the dual n/n+ silicon dopant profle or the triple one with a moderately
doped matching sublayer inserted. All the diodes ...
Added: September 4, 2023
Смирнов И. А., Черкесова Л. В., Поркшеян В. М. et al., IEEE, 2019.
In the offered examination the mathematical modelling of interaction processes of electromagnetic waves with composite substances nanostructures and electrodynamic structures on the base of graphene and carbon nanotubes is made. Models are grounded on solution of diffraction boundary-value 3D problems for Maxwell's equations with electrodynamic boundary conditions. Principles of subTHz and THz frequency bands controlled ...
Added: May 10, 2023
A Prikhodko, I Belikov, Mikhailov D. et al., Journal of Physics: Conference Series 2021 Vol. 2086 No. 1 Article 012063
We propose the design of a dual-pixel array of Schottky diodes. Each diode is fixed between the bow-tie antenna arms on top of a SI-GaAs membrane acting as a waveguide backshort for efficient coupling of the antenna to the feedline of high-directivity horn. The detector utilizes a single RF output line: microwave reflectometer is used ...
Added: May 18, 2022
Shurakov A., Mikhailov D., Belikov I. et al., Journal of Physics: Conference Series 2020 Vol. 1695 No. 1 Article 012154
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, ...
Added: May 18, 2022
Shurakov A., Prikhodko A., Mikhailov D. et al., Journal of Physics: Conference Series 2020 Vol. 1695 No. 1 Article 012156
In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase ...
Added: May 17, 2022