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September 15, 2026
Immunity to Chaos: How Personal Resources Help Us Cope with the Challenges of a Turbulent World
International conflicts, crises and digital overload—the modern world puts our minds to the test every day. Traditional psychology often focuses on the consequences: anxiety, depression, and psychosomatic disorders. But what if we looked at the problem differently—through the lens of the resources that prevent us from breaking down? Psychological immunity is precisely this set of resources. Alena Zolotareva and her group, Psychological Immunity as a Resource for Positive Functioning, are developing an integrative model of this phenomenon, adapting diagnostic tools and preparing for large-scale empirical research. Why do psychologists need to collaborate with medical professionals, and how could their research transform preventive care in clinics and corporations?
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Role of arsenic vapor pressure in transformation of InAs quantum dots during overgrowth by a GaAs capping layer

Journal of Luminescence. 2024. Vol. 272. Article 120621.
Balakirev S., Alexey Nadtochiy, Natalia Kryzhanovskaya, Kirichenko D., Chernenko N., Shandyba N., Sergey Komarov, Anna Dragunova, Alexey Zhukov, Solodovnik M.

The results of a study of the optical properties of self-assembled InAs/GaAs (001) quantum dots (QDs) overgrown under different arsenic pressures, obtained using photoluminescence (PL) and PL excitation spectroscopy, are presented. If the arsenic pressure during overgrowth is low (2.5·10−6 Pa), a series of pronounced QD-related peaks is observed in the 77-K PL spectrum over a 200-meV broad spectral interval with the brightest one located at 1.37 eV. With increasing arsenic pressure, the PL spectrum becomes smoother and is red-shifted to 1.16 eV at 1·10−5 Pa and to 1.26 eV at 3·10−5 Pa. We explain this behavior in terms of enhanced QD decomposition, the mechanism of which is strongly dependent on the arsenic deficiency or excess during the overgrowth process, determined by the arsenic pressure. Supported by the analysis of the wetting layer luminescence, we also conclude that the total indium content in the QD layer decreases with decreasing arsenic pressure during the overgrowth. This study reveals an essential role of the arsenic pressure in the overgrowth of InAs QDs.

Research target: Physics Nanotechnologies
Language: English
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Keywords: epitaxyэпитаксияGaAs photoluminescenceфотолюминесценциядавление мышьякаInAs quantum dotsarsenic pressureквантовые точки InAsGaAs
Publication based on the results of:
Создание и исследование полупроводниковых гетероструктур А3В5 с квантовыми точками для нанофотоники, излучателей одиночных фотонов, микро- и нанолазеров (2024)
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