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Role of arsenic vapor pressure in transformation of InAs quantum dots during overgrowth by a GaAs capping layer
Journal of Luminescence. 2024. Vol. 272. Article 120621.
Balakirev S., Alexey Nadtochiy, Natalia Kryzhanovskaya, Kirichenko D., Chernenko N., Shandyba N., Sergey Komarov, Anna Dragunova, Alexey Zhukov, Solodovnik M.
The results of a study of the optical properties of self-assembled InAs/GaAs (001) quantum dots (QDs) overgrown under different arsenic pressures, obtained using photoluminescence (PL) and PL excitation spectroscopy, are presented. If the arsenic pressure during overgrowth is low (2.5·10−6 Pa), a series of pronounced QD-related peaks is observed in the 77-K PL spectrum over a 200-meV broad spectral interval with the brightest one located at 1.37 eV. With increasing arsenic pressure, the PL spectrum becomes smoother and is red-shifted to 1.16 eV at 1·10−5 Pa and to 1.26 eV at 3·10−5 Pa. We explain this behavior in terms of enhanced QD decomposition, the mechanism of which is strongly dependent on the arsenic deficiency or excess during the overgrowth process, determined by the arsenic pressure. Supported by the analysis of the wetting layer luminescence, we also conclude that the total indium content in the QD layer decreases with decreasing arsenic pressure during the overgrowth. This study reveals an essential role of the arsenic pressure in the overgrowth of InAs QDs.
Dmitriev A., Kornilov V., Batienkov R., Lecture Notes in Civil Engineering 2026 Vol. 886 P. 249–255
Numerous studies have provided compelling evidence that the probability distribution of avalanche sizes follows a power law, and that 1/f noise is present in the stochastic dynamics of landslides. We present a theoretical explanation of these phenomena within the framework of self-organized criticality theory, proposing a discrete-time model in the form of a sandpile cellular ...
Added: October 13, 2026
Dmitriev A., Shulman I., Lebedev A., Studies in Computational Intelligence 2026 Vol. 1265 P. 266–273
A discrete-time model is presented for the self-organization of the X/Twitter social network to the edge of a phase transition, characterized by avalanche-like propagation of information in the network. The model is based on the analogy between the critical dynamics of the X social network and sandpile cellular automata with Manna rule on the Chung-Lu ...
Added: October 13, 2026
Arutyunov K., Kharitonov I. A., Petrosyants K. O., JETP Letters 2026 Vol. 124 No. 6 P. 1–16
Superconducting properties of metallic micro- and nanowires can be entirely different from those of bulk superconductors. Of particular interest is the nonequilibrium current-induced state of a quasi-one-dimensional superconducting channel. The most interesting phenomenon here is the stepped I–V characteristic, explained by a process known as phase slip center activation. If the origin of such step-like ...
Added: October 13, 2026
Makarov D. M., Kalikin N., Fashchevsky K. A. et al., Electrochimica Acta 2026 Vol. 579 Article 150159
Machine learning (ML) has become a powerful tool for accelerating the development of carbon-based supercapacitors;
however, most published models assume that a single predictive framework can describe both conventional
porous carbons and hybrid carbon electrodes. Here, we test this assumption using a comprehensive
benchmark dataset and an extended literature-curated dataset enriched with synthesis- and electrolyte-related
descriptors. Three ML algorithms ...
Added: October 13, 2026
Махлуф М., Ozhegov R., Elezov M. et al., Фотоника 2026 Vol. 20 No. 6 P. 414–423
This paper compares the ranging precision of direct time-of-flight (dToF) and non-line-of-sight (NLOS) LiDAR architectures, both using a superconducting nanowire single-photon detector (SNSPD). Both systems operate at 1550 nm with a 50 ps pulsed laser and time-correlated single-photon counting (TCSPC). The dToF configuration achieved approximately 100 µm precision at 10 m, while the NLOS configuration achieved 500 µm precision for ...
Added: October 12, 2026
Singapore: Springer, 2026.
This volume presents the Proceedings of the 34th IUPAP Conference on Computational Physics (CCP2023), held in Kobe, Japan on August 4–8, 2023. It offers a collection of peer-reviewed articles that highlight recent developments in computational and simulation research across various areas of physics. Key topics include the use of data science, quantum computing, and machine ...
Added: October 12, 2026
Goncharov A., Chibisov A., Advanced Theory and Simulations 2023 Vol. 12 No. 13 Article 2200816
Designing stable quantum computers with the ability to correct errors responsibly requires a detailed understanding of the physical processes that underlie these devices. In this study, detailed quantum mechanical simulations of the atomic structure, charge distribution of electron density, and distribution and orientation of magnetic and quantum states as a function of applied external pressure ...
Added: October 11, 2026
Chibisov A., Gnidenko A., Chibisova M. et al., FlatChem 2023 Vol. 41 Article 100533
Manufacturing precise quantum computers with small errors in quantum operations, long coherence times, and low power consumption is the most important challenge in modern nanoelectronics. To understand the operating modes of such calculators in detail, both the optimal arrangement of the qubit system within the structure and changes in its magnetic properties must be comprehensively ...
Added: October 11, 2026
Denis K., Dorokhin M. V., Ved M. V. et al., Physical Review B: Condensed Matter and Materials Physics 2021 Vol. 104 No. 12 Article 125309
The GaAs/InGaAs quantum wells with a ferromagnetic δ〈Mn〉 layer in GaAs barrier demonstrate a set of interesting spin-related phenomena originating from Mn-hole interaction. One of such phenomena is a spin-memory effect which consists of Mn spin polarization induced by interaction with vicinity spin-polarized holes generated under the exposure by short circularly polarized light pulses. Here long Mn ...
Added: September 6, 2026
V.I. Voitovich, I.S. Makhov, Andryushkin V. V. et al., Journal of Luminescence 2026 Vol. 295 Article 121936
We report on a comparative study of the optical and structural properties of short-period superlattices (SPSLs) based on digital ternary InGaAs/InAlAs alloys and their counterparts with quaternary InGaAlAs barriers, both grown on InP substrates and emitting in the 1.3 μm wavelength range. The heterostructures were grown by molecular beam epitaxy and analyzed using photoluminescence spectroscopy ...
Added: July 8, 2026
Sharov V., Pavlov A., Eliseyev I. et al., Advanced Optical Materials 2025 Vol. 13 No. 30 Article e01821
Strain engineering is a powerful tool for the development of nanostructured semiconductor devices. In this work, the effect of high external elastic strain is investigated on the photoluminescence of GaN nanowires (NWs). Individual horizontal NWs are strained to bending strains up to 2.2% using an atomic force microscope (AFM) probe. Novel nanomanipulation techniques for mechanical ...
Added: November 12, 2025
Anna Obraztsova, Ivan Makhov, Ivan Melnichenko et al., Journal of Lightwave Technology 2025 Vol. 43 No. 15 P. 7278–7284
Spectral characteristics of quantum dot (QD) microdisk lasers under spatially inhomogeneous optical excitation are
investigated. By varying the position and size of the continuous wave excitation spot over the laser cavity, we demonstrate controllable selection and switching of lasing whispering gallery modes (WGMs) at room temperature. Experimental results show that shifting the excitation spot across the ...
Added: September 5, 2025
Balakirev S. V., Makhov I., Kirichenko D. V. et al., Optical Materials 2025 Vol. 163 Article 116964
We reveal a strong dependence of optical properties of InAs quantum dots (QDs) on the As/Ga flux ratio used
during the overgrowth with a low-temperature GaAs layer. Evaluating various characteristics of the photoluminescence
spectra, we determine an optimal As/Ga flux ratio which allows formation of QDs emitting at the
longest wavelengths, with the highest intensity and the largest ...
Added: April 17, 2025
P. S. Berezhnoy, Koreyev A. S., A. B. Van'kov et al., Physical Review B: Condensed Matter and Materials Physics 2024 Vol. 110 No. 23 Article 235306
Collective spin excitations were utilized to probe many-particle energies of strongly correlated quantum Hall
ferromagnets (FMs) at 1/3< ν < 1. For this purpose, experiments on inelastic light scattering and polarized
photoluminescence (PL) were performed on a MgZnO/ZnO heterostructure, containing a high-mobility two dimensional
electron system with theWigner-Seitz parameter rs ≈ 11. The dispersion of the Larmor spin exciton ...
Added: January 14, 2025
Koreyev A. S., P.S. Berezhnoy, Gorbunov A. V. et al., Physical Review B: Condensed Matter and Materials Physics 2024 Vol. 110 No. 16 Article 165417
The phase diagram of the “gas-magnetoexciton condensate” transition of an excited two-dimensional electron
system placed in a quantizing magnetic field has been constructed in the “temperature-laser excitation power
density” coordinates. Based on the experimental data, we can conclude that the condensate is a collective,
incompressible in real space, excited state of a quantum Hall insulator. ...
Added: January 10, 2025
Никитина Е. В., Соболев М. С., Пирогов Е. В. et al., Конденсированные среды и межфазные границы 2024 Т. 26 № 3 С. 490–495
Добавление нескольких процентов азота в GaP или GaPAs позволяют получить твердые растворы GaPNAs, согласованные по параметру кристаллической решетки с кремниевой подложкой в большом диапазоне значений ширины запрещенной зоны, что дает возможность получения оптоэлектронных кремниевых интегральных схем. Однако материалы с небольшой долей азота являются мало изученными из-за сложности в эпитаксиальном выращивании четверных твердых растворов с тремя ...
Added: November 24, 2024
Shalygin V. A., Makhov I., Adamov R. B. et al., Journal of Applied Physics 2024 Vol. 136 No. 19 Article 195703
Near-infrared photoluminescence spectra of the n-doped gallium arsenide epilayer under heating lateral electric field conditions are studied. The field dependences of hot electron and hole temperatures are determined from photoluminescence spectra and from solving the power balance equation using current–voltage characteristic. Polarization anisotropy of the photoluminescence radiation arising due to the anisotropy of hot electron distribution ...
Added: November 23, 2024
Anikeeva V., Болдырев Н. Ю., Семенова О. И. et al., Оптика и спектроскопия 2024 Т. 132 № 8 С. 793–799
The paper presents the results of the temperature dependences study of the luminescence spectra (3.6 – 120 K) upon excitation by 405 nm light and of the non-contact measured photoconductivity spectra (3.6 – 300 K) of a CsPbBr3 single crystal. In the low-temperature photoluminescence (PL) spectrum, in addition to the self-trapped exciton line (2.318 eV at 10 K), a rich ...
Added: October 29, 2024
Makhov I., Kryzhanovskaya N., Dragunova A. et al., Journal of Luminescence 2024 Vol. 276 Article 120819
One drawback of self-organized quantum dots is their low optical gain. The development of new shaping methods that would allow higher gain, for example, due to a higher surface density of the QD array, remains an important task to date. In the present work, arrays of quantum dots have been formed by substituting phosphorous atoms ...
Added: August 27, 2024
Kryzhanovskaya N., Dragunova A., Komarov S. et al., Оптика и спектроскопия 2021 Т. 129 № 2 С. 218–222
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spectroscopy. The PL line of the formed array of island lies in the range of 950–1000 nm at room temperature. The ...
Added: June 3, 2024
Гридчин В. О., Сошников И. П., Резник Р. Р. et al., Письма в Журнал технической физики 2023 Т. 49 № 5 С. 32–35
The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor ...
Added: May 20, 2024