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Внутренние потери в инжекционных лазерах на основе квантовых яма-точек
Физика и техника полупроводников. 2022. Т. 56. № 9. С. 922-927.
The internal loss at the lasing threshold were studied
experimentally and numerically in laser cavities comprising dense
arrays of InGaAs/GaAs quantum dots (quantum well-dots) as
a function of the number of their planes and the output loss.
Numerical values of the parameters were found that determine the
free-carrier absorption in the active region and in the waveguiding
layer. The optimal design of the laser diode was determined to
achieve the highest external differential efficiency.
Zhukov A., Moiseev E., Nadtochiy A. et al., IEEE Journal of Quantum Electronics 2023 Vol. 59 No. 1 Article 2000108
We discuss the origin of optical losses in microdisk lasers with a dense array of InGaAs quantum dots in the active
region. In particular, we study the effect of microlaser diameter D variation from 15 to 200 μm on optical losses of different nature. A strong dependence of the lasing wavelength on the diameter is observed: ...
Added: January 26, 2023
Максимов М. В., Шерняков Ю. М., Гордеев Н. Ю. et al., Письма в Журнал технической физики 2023 Т. 49 № 5 С. 18-21
We propose an approach for encoding and transmitting information based on the use of a quantum dot laser, which, depending on the injection current, emits either one of two or simultaneously two spectral components, with different wavelengths. When the laser is modulated by current, each lasing line is detected by an independent photodiode, and thus ...
Added: June 27, 2023
Fedor Zubov, Moiseev E., Mikhail Maximov et al., Photonics 2023 Vol. 10 No. 3 Article 290
We report on half-ring lasers that are 100–200 um in diameter and are fabricated by cleaving
the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the
same wafer are compared. The active area of the microlasers is based on the quantum heterostructures
of mixed (0D/2D) dimensionality, referred to as quantum well-dots with ...
Added: June 27, 2023
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Light: Science and Applications 2021 Vol. 10 P. 1-11
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with ...
Added: April 19, 2021
Гордеев Н. Ю., Moiseev E., Fominykh N. et al., Письма в Журнал технической физики 2022 Т. 48 № 18 С. 36-40
The temperature characteristics of ring lasers with a diameter of 480 μm of the novel
structure with an active region based on ten layers of InAs/InGaAs/GaAs quantum dots were studied. Lasers demonstrated a low threshold current density (200 A/cm2 at 20°C in continuous
wave regime), the characteristic temperature of the threshold current in the range 20–100°C
was 68 K, the ...
Added: October 3, 2022
Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov et al., IEEE Photonics Technology Letters 2022 Vol. 34 No. 24 P. 1349-1352
We report on the fabrication and studies of
Ø100 μm half-disk lasers with an active region based on
InGaAs/GaAs quantum dots providing very high modal gain.
Such resonators support whispering gallery modes propagating
at the cavity periphery. The microlasers show directional light
outcoupling: continuous-wave output power emitted from the
flat side reaches 17 mW, which is about 7 times greater than
the ...
Added: December 13, 2022
Муретова М. Е., Ф.И. Зубов, Асрян Л. В. et al., Физика и техника полупроводников 2022 Т. 56 № 3 С. 363-369
Using numerical simulation, the search for designs of asymmetric barrier layers (ABLs) in a laser
diode with a GaAs waveguide emitting at a wavelength of λ = 980 nm is carried out. A pair of ABLs adjoining
the active region on both sides blocks undesired charge-carrier flows and suppresses parasitic spontaneous
recombination in the waveguide layers. Optimal designs ...
Added: August 11, 2022
Gordeev N., Kulagina M., Guseva Y. et al., Laser Physics Letters 2022 Vol. 19 No. 6 Article 066201
An original design of ring semiconductor lasers based on InAs/InGaAs/GaAs quantum dots,
promising for clock pulse generation, optical sensing, biological and medical applications, and
microwave photonics, has been proposed and tested. Lasing was obtained at room temperature
with a nominal threshold current density as low as 150 A cm−2. The output power in continuous
wave mode was 45 mW. ...
Added: December 13, 2022
Han L., Wang Z., Gordeev N. et al., Micromachines 2023 Vol. 14 No. 6 Article 1271
Semiconductor lasers have developed rapidly with the steady growth of the global laser
market. The use of semiconductor laser diodes is currently considered to be the most advanced
option for achieving the optimal combination of efficiency, energy consumption, and cost parameters
of high-power solid-state and fiber lasers. In this work, an approach for optical mode engineering
in planar waveguides ...
Added: June 27, 2023
Balakirev S., Chernenko N., Kryzhanovskaya N. et al., Electronics 2022 Vol. 11 No. 23 Article 4062
We studied the influence of the arsenic pressure during low-temperature GaAs overgrowth of InAs quantum dots on their optical properties. In the photoluminescence spectrum of quantum dots overgrown at a high arsenic pressure, we observed a single broad line corresponding to unimodal size distribution of quantum dots. Meanwhile, two distinct peaks (~1080 and ~1150 nm) ...
Added: December 13, 2022
Makhov I., Ivanov K., Moiseev E. et al., Optics Letters 2023 Vol. 48 No. 13 P. 3515-3518
The peculiarities of two-state lasing in a racetrack microlaser
with an InAs/GaAs quantum dot active region are
investigated by measuring the electroluminescence spectra
at various injection currents and temperatures. Unlike
edge-emitting and microdisk lasers, where two-state lasing
involves the ground and first excited-state optical transitions
of quantum dots, in racetrack microlasers, we observe lasing
through the ground and second excited states. As ...
Added: June 27, 2023
Vankov A., Kukushkin I., JETP Letters 2017 Vol. 105 No. 6 P. 380-383
The magnetic field dynamics of intersubband collective excitations in two-dimensional electron systems based on Mg_xZn_{1−x}O/ZnO heterostructures is studied by the Raman scattering method. It is found that, upon the change in the spin polarization under conditions of the transition from the filling factor ν=2 to ν=1, the energy of the intersubband magnetoplasmon changes considerably. The ...
Added: November 30, 2017
Nadtochiy A., Gordeev N., Kharchenko A. et al., Journal of Lightwave Technology 2021 Vol. 39 No. 23 P. 7479-7485
Modal absorptions in laser-like heterostructures containing
InAs self-assembled quantum dots (QDs) and InGaAs
quantum well-dots (QWDs) have been studied. The evaluation
of photoresponse as a function of waveguide length has allowed
us to determine per-layer modal absorptions of 69 and 13 cm-1
for the ground state optical transitions of QWDs and QDs, respectively.
The values of the modal absorption can be ...
Added: November 28, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10-13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Demenev A. A., Brichkin A. S., Gavrilov S. et al., Semiconductors 2018 Vol. 52 No. 14 P. 1827-1832
The dynamically compressed coherent exciton-polariton condensate state was implemented at the low polariton (LP) band bottom in GaAs microcavity resonantly excited in a wide range of wavevectors by the convergent 2.5-ps long Gaussian linearly polarized beam when the active region of the cavity was ahead of the waist. Formation of the dynamically compressed condensate state ...
Added: February 12, 2019
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
F I Zubov, E I Moiseev, A M Nadtochiy et al., Semiconductor Science and Technology 2022 Vol. 37 No. 7 Article 075010
Epi-side down bonding on a silicon substrate of AlGaAs/GaAs microdisk lasers is presented. A heterostructure with coupled large optical cavities enables location of an InGaAs quantum dot active region at a distance of ∼1 µm from the heterostructure surface. The thermal resistance was reduced to 0.2 and 0.1 K/mW for disks of 30 and 50 µm in diameter, ...
Added: July 12, 2022
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Zubov F. I., Shernyakov Y. M., Gordeev N. Y. et al., Quantum Electronics 2022 Vol. 52 No. 7 P. 593-596
Lasers of different designs (stripe lasers and lasers with a half-disk cavity) based on InGaAs quantum dots formed by a mechanism different from the Stransky – Krastanov growth are studied. The possibility of lasing on the fundamental optical transition at record-high (134 – 153 cm–1) optical losses is demonstrated. The saturated modal gain is estimated ...
Added: December 13, 2022
Zubov F. I., Muretova M. E., Asryan L. V. et al., Journal of Applied Physics 2018 Vol. 124 No. 13 Article 133105
The feasibility of implementation of asymmetric barriers (ABs) made of common materials for
completely aluminum-free diode lasers is studied. The ABs adjoining a low-dimensional active
region on both sides aim to prevent bipolar population in the waveguide layers and thus to suppress
parasitic recombination therein, which in turn would enhance the efficiency and temperature-stability
of the device. Our search ...
Added: March 16, 2021
Издательство Нижегородского государственного университета им. Н.И. Лобачевского, 2014
Сборник трудов, представленных на XVIII международном симпозиуме "Нанофизика и наноэлектроника" и посвященных актуальным проблемам физики конденсированного состояния, рентгеновской оптики и методам диагностики наноструктур. ...
Added: March 15, 2014
Жуков А. Е., СПб. : ПОЛИТЕХ-ПРЕСС, 2019
Пособие включает в себя учебные материалы по физике и технологии полупроводниковых квантовых точек и лазеров на основе квантовых точек, включая микролазеры. Квантовые точки – это новая разновидность полупроводниковых квантоворазмерных структур (наноструктур), в которых движение носителей заряда ограничено во всех трех направлениях. Возникающая в результате размерного квантования модификация плотности состояний, а также большая энергия локализации носителей ...
Added: February 10, 2020