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Continuous-wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser
Electronics Letters. 2015. Vol. 51. No. 17. P. 1354-1355.
A 31 μm in diameter microdisk laser with an InAs/InGaAs quantum dot active region has been tested in the continuous-wave regime at elevated temperatures. Lasing is achieved up to 100°C with a threshold current of 13.8 mA. The emission spectrum demonstrates single-mode lasing at 1304 nm with a side mode suppression ratio of 24 dB and a dominant mode linewidth of 35 pm.
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English
Zubov F., Maximov M., Moiseev E. et al., Electronics Letters 2015 Vol. 51 No. 21 P. 1686-1688
The linewidth enhancement factor (LEF) of an InAs/InGaAs quantum dot Fabry-Pérot laser in a wide wavelength range from 1110 to 1300 nm, including ground state (GS) and exited state (ES) bands, is studied. LEF spectra were derived from amplified spontaneous emission spectra measured below the threshold in the pulse regime. The ES optical transition is ...
Added: September 30, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Optics Letters 2017 Vol. 42 No. 17 P. 3319-3322
High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600 A/cm2600 A/cm2 (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality ...
Added: September 29, 2020
Kryzhanovskaya N., Mukhin I., Maximov M. et al., Optics Letters 2015 Vol. 40 No. 17 P. 4022-4025
Optically pumped InAs quantum dot microdisk lasers with grooves etched on their surface by a focused ion beam are studied. It is shown that the radial grooves, depending on their length, suppress the lasing of specific radial modes of the microdisk. Total suppression of all radial modes, except for the fundamental radial one, is also ...
Added: September 29, 2020
Zubov F., Maximov M., Kryzhanovskaya N. et al., Optics Letters 2019 Vol. 44 No. 22 P. 5442-5445
We report on direct large signal modulation and the reliability studies of microdisk lasers based on InGaAs/GaAs quantum well-dots. A 23 μm in diameter microlaser exhibits an open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s data transmission at 30°C without temperature stabilization. The ageing tests of a 31 μm ...
Added: September 30, 2020
Maximov M., Kryzhanovskaya N., Nadtochiy A. et al., Nanoscale Research Letters 2014 Vol. 9 No. 1 P. 657-657
Ultrasmall microring and microdisk lasers with an asymmetric air/GaAs/Al0.98Ga0.02As waveguide and an active region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μm were fabricated and studied. The diameter D of the microrings and microdisks was either 2 or 1.5 μm, and the inner diameter d of the microrings varied from 20% to 70% of the outer diameter D. The microring with D = 2 μm ...
Added: September 30, 2020
Kryzhanovskaya N., Moiseev E., Оптика и спектроскопия 2018 Т. 124 № 5 С. 695-699
Проведено исследование спектральных характеристик отражения оптического излучения микромассивами кремниевых нанопилларов в видимом и ближнем ИК диапазоне. Микромассивы кремниевых нанопилларов формируются посредством электронно-лучевой литографии и реактивного ионного травления. Измерены спектры отражения микромассивов с периодом нанопилларов в массиве 400, 600, 800 и 1000 nm. Высота нанопилларов в массиве 0.5 µm, а диаметр варьировался от 150 до 240 ...
Added: September 30, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Optics Express 2017 Vol. 25 No. 14 P. 16754-16760
In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under ...
Added: September 29, 2020
Bolshakov A., Fedorov V., Sibirev N. et al., Physica Status Solidi - Rapid Research Letters 2019 Vol. 13 No. 11 P. 1900350
Growth and properties of the self‐catalyzed heterostructured GaP nanowires (NWs) with GaP1 − xAsx insertions in the form of nanodiscs (NDs) grown by means of molecular‐beam epitaxy on Si (111) substrate are studied. To obtain the NDs with the different composition and optoelectronic properties, the ratio of As and P fluxes is varied. Structural properties of the synthesized ...
Added: September 29, 2020
Оценка вклада поверхностной рекомбинации в микродисковых лазерах с помощью высокочастотной модуляции
Zhukov A., Moiseev E., Kryzhanovskaya N. et al., Физика и техника полупроводников 2019 Т. 53 № 8 С. 1122-1127
Исследованы микродисковые лазеры диаметром 10−30 мкм, работающие при комнатной температуре без
термостабилизации, с активной областью на основе наноструктур гибридной размерности — квантовых
ям−точек. Выполнены высокочастотные измерения отклика микролазеров в режиме прямой малосигнальной
модуляции, с помощью которых установлены параметры быстродействия и проведен их анализ в зависимости
от диаметра микролазера. Обнаружено, что K-фактор составляет (0.8 ± 0.2) нс, что соответствует оптическим ...
Added: October 1, 2020
Moiseev E., Kryzhanovskaya N., Polubavkina Y. et al., ACS Photonics 2017 Vol. 4 No. 2 P. 275-281
Microdisk lasers demonstrate high performance and low threshold characteristics due to supporting of whispering gallery modes with a high quality factor. One of the challenging problems impeding some practical applications of whispering gallery mode lasers is that they have isotropic emission predominantly lying in the plane of the cavity. In this work, we present a ...
Added: September 30, 2020
Kryzhanovskaya N., Moiseev E., Thin solid films 2019 Vol. 672 P. 109-113
Silicon nanopillar (Si NP) arrays with the axial p-n junction were formed and investigated. A method to fabricate Si NP ordered arrays by means of electron beam lithography using the negative electron resist and reactive ion etching is presented.
The effect of strong resonance light scattering – change of the color of separate Si NPs - ...
Added: September 29, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Journal of Applied Physics 2016 Vol. 120 No. 33 P. 233103
We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a ...
Added: October 1, 2020
Mintairov S., Maximov M., Nadtochiy A. et al., Applied Physics Express 2020 Vol. 13 No. 1 Article 015009
Studies of electronic transitions in the photoconverters with In0.4Ga0.6As quantum well-dots (QWD) layers have been carried out. It is shown that the quantum yield and electroluminescence spectral peaks are well described by e1-lh1 and e1-hh1 optical transitions in the quantum well with the same average composition and thickness. The energy of the optical transitions shifts toward longer ...
Added: November 5, 2020
Switzerland : Springer, 2020
This book comprises high-quality, refereed research papers presented at the 2019 International Symposium on Computer Science, Digital Economy and Intelligent Systems (CSDEIS2019): The symposium, held in Moscow, Russia, on 4–6 October 2019, was organized jointly by Moscow State Technical University and the International Research Association of Modern Education and Computer Science. The book discusses the ...
Added: March 15, 2020
Moiseev E., Максимов М. В., Kryzhanovskaya N. et al., Физика и техника полупроводников 2020 Т. 54 № 2 С. 212-216
The results are presented on a comparative analysis of spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx µm with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold ...
Added: September 30, 2020
Kryzhanovskaya N., Zhukov A., Maximov M. et al., IEEE Journal on Selected Topics in Quantum Electronics 2015 Vol. 21 No. 6 P. 709-713
Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 μm were studied under optical pumping. The disks were fabricated with standard photolithography and two-step wet etching. We demonstrate room temperature lasing in the 1.29-1.32-μm wavelength range (ground-state transition) in microlasers as small as 1 μm in diameter. The microlasers demonstrate ...
Added: September 30, 2020
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., IEEE Journal of Quantum Electronics 2020 Vol. 56 No. 5 P. 1-8
We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical power limited by the thermal rollover effect, the corresponding injection current and excess temperature of the device. The ...
Added: July 30, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Laser Physics Letters 2018 Vol. 15 No. 1 P. 015802
The combination of high operation temperatures and small diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this letter, results are presented for quantum dot III–V-on-Si microdisk diode lasers tested at elevated temperatures. To the best of our knowledge, we have demonstrated the first uncooled microlasers ...
Added: September 29, 2020
M. : Association of graduates and employees of AFEA named after prof. Zhukovsky, 2018
The materials of The International Scientific – Practical Conference is presented below.
The Conference reflects the modern state of innovation in education, science, industry and social-economic sphere, from the standpoint of introducing new information technologies.
It is interesting for a wide range of researchers, teachers, graduate students and professionals in the field of innovation and information technologies. ...
Added: May 24, 2018
Kryzhanovskaya N., Maximov M., Zhukov A. et al., Journal of Lightwave Technology 2015 Vol. 33 No. 1 P. 171-175
A dense array of InGaAs quantum dots formed by MOCVD on a misoriented GaAs substrate has been used as an active medium of microdisk resonators of various types: a cylindrical disk, an undercut disk, and a suspended disk. Single-mode room temperature lasing in a 9-μm microdisk laser is demonstrated with a dominant line around 1.13 ...
Added: September 30, 2020
Kryzhanovskaya N., Polubavkina Y., Moiseev E. et al., Journal of Applied Physics 2017 Vol. 121 No. 4 P. 043104
We present detailed studies of optically pumped InAs/InGaAs quantum dot based racetrack microlasers with 3.5-μm bend radius operating at room temperature. Q factor over 8000 and room temperature threshold power in the mW-range were achieved in the racetrack microlasers with straight section length ranging from 0 to 4 μm. A systematic investigation of the influence of the racetrack ...
Added: October 1, 2020
Maximov M., Nadtochiy A., Kryzhanovskaya N. et al., Applied Sciences (Switzerland) 2020 Vol. 10 No. 3 Article 1038
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition of 4–16 monolayers of InxGa1−xAs of moderate indium composition (0.3 < x < 0.5) on GaAs substrates and represent dense arrays ...
Added: September 30, 2020
Moiseev E., Kryzhanovskaya N., Zhukov A. et al., Optics Letters 2018 Vol. 43 No. 19 P. 4554-4557
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential ...
Added: September 27, 2020
Kryzhanovskaya N., Mukhin I., Moiseev E. et al., Optics Express 2014 Vol. 22 No. 21 P. 25782-25787
Focused ion beam is applied to quantum dot based microresonators to form pits or groove on their surface. The emission spectra of the resonators based lasers are significantly thinned out after the ion beam milling, and one or two modes become dominant instead of a group of modes having comparable intensities. The linewidth of the ...
Added: September 29, 2020