Определение параметров SPICE-моделей МОПТ при низких температурах (до минус 200°C)
It is shown that BSIM3 standard MOSFET SPICE model does not provide more abrupt MOSFET transconductance dependence on gate voltage at low temperature (up to –200°C) caused by mobility increase. Enhanced MOSFET macro model for low temperature is proposed which accounts for more abrupt MOSFET transconductance dependence on gate voltage. Additional nonlinear voltage-controlled voltage source Vg_Cor= f (Vg, T) was connected between MOSFET gate and gate voltage source Vg. This voltage source reduces effective MOSFET gate voltage for large values of Vg and provides necessary transconductance dependence on gate voltage at low temperatures. The macromodel provides reduction of Id=f(Vg) simulation error from 60% (for standard BSIM3v3 model) down to 15% (for the developed macromodel).