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Regular version of the site

Article

Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films

Physical Review B: Condensed Matter and Materials Physics. 2018. Vol. 97. No. 184512. P. 184512-1-184512-13.
Sidorova M., Kozorezov A. G., Semenov A., Korneeva Y., Mikhailov M., Devizenko A., Korneev A., Chulkova G., Goltsman G.

We developed the model of the internal phonon bottleneck to describe the energy exchange between the
acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into
two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified
subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon
conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption
of the sub-THz radiation technique,we studied electron-phonon relaxation in ultrathin disordered films of tungsten
silicide.We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based
on the proposed model agree well, resulting in τe−ph ∼ 140–190 ps at TC = 3.4K, supporting the results of earlier
measurements by independent techniques.