Modification of MIS Structures by Electron Irradiation and High-Field Electron Injection
Dielectric films and siliconinsulator interfaces in metalinsulatorsemiconductor (MIS) structures are modified using injectionthermal treatment, which involves highfield injection of a specified charge into the gate dielectric and subsequent annealing of the structure. The effect of the injectionthermal treatment modes on the MIS structure modification is investigated. The injectionthermal treatment is shown to reduce imperfection of the dielectric films and, thus, enhance reliability of the MIS devices. It is established that the MIS structure modification processes occurring at the injectionthermal treatment are largely identical to those occurring at the radiation thermal treatment; therefore, for certain MIS devices, the radiation thermal treatment can be replaced by the injectionthermal one.
It has been shown that the increase of charge stability of MDS-systems can be achieved by optimal choosing the thickness of dielectric films of silicon dioxide and phosphorous soda-lime glass.
In the paper it has been researched diffusion of phosphorus in thermal SiO2 films on MIS structure and influence of the process on charge effects in gate dielectric and at interfaces at Fowler-Nordheim high-field tunnel injection of electrons.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.