Снижение переходного сопротивления омических контактов к высокоомным полупроводникам с помощью оптического излучения
The attempt is made to decrease transition resistance of ohmic contacts to high-ohmic semiconductors (such as cadmium telluride and semi-insulating gallium arsenide) due to extra free carrier concentration creating in near-contact region by optical stimulation. Various tested construction variants of such contacts are presented in this paper. The illumination is shown to be useful for drastic (several orders of magnitude) decreasing of two-polar sample total resistance. This result may be interpreted only as transition resistance decreasing upon contact illumination.