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Method of separate determination of high-ohmic sample resistance and contact resistance

Modern Electronic Materials. 2015. Vol. 1. No. 3. P. 93–96.
Golubiatnikov V. A., Grigoryev F. I., Lysenko A. P., Strogankova N. I., Belov A., Kanevsky V.

A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT), etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed. & 2016 The National University of Science and Technology MISiS. Production and hosting by Elsevier B.V. This is an open access article under the CC BY-NC-ND license

Priority areas: engineering science
Language: English
Full text
DOI
Keywords: омический контактhigh-ohmic semiconductorsnear-contact region illuminationseparate determinationcontact resistancesample volume resistancetwo-polar sample
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