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Use of Contact Illumination for HighResistance Semiconductor Conductivity Measurements

Instruments and Experimental Techniques. 2014. Vol. 57. No. 3. P. 326–329.
Lysenko A. P., Grigoryev F. I., Strogankova N. I., Шадов М. Б., Голлубятников В. А.

Abstract—It is shown that illumination of ohmic contacts to highresistance cadmium telluride and gallium arsenide samples affects not only the transient resistance of the contact, but the bulk conductivity of samples by increasing the concentration of free charge carriers. The model explaining the increase in the volume con ductivity of the sample under the illumination of the contact region is presented. The procedure for separate determination of the transient resistances of the ohmic contact and the sample volume, suitable for high resistance semiconductors, is proposed.

Priority areas: engineering science
Language: English
Full text
DOI
Keywords: ohmic contactsомический контактэлектрофизические параметрыоптическая стимуляция контактаконцентрация свободных носителей зарядавысокоомный полупроводникhigh-resistance semiconductorelectrophysical parametersoptical stimulation of contactthe concentration of free charge carriers
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