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April 30, 2026
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Определение электрофизических параметров высокоомных полупроводников при подсветке образца красным излучением регулируемой интенсивности

Гл. 64. С. 441–444.
Lysenko A. P., Golubiatnikov V. A., Grigoryev F. I., Strogankova N. I., Белов А. Г.

It is known that illumination of the sample vysokomnogo semiconductor material significantly changes its electrical properties. It is shown that the contact regions of the sample illumination with monochromatic radiation intensity adjustable with a photon energy greater than the width of the forbidden zone of the test material, reduces the resistance of the sample, in some cases by several orders of magnitude. Provides a method for the separate determination of the resistance of the sample and contacts to it, which has been tested on a sample of semi-insulating n-GaAs. It is shown that the resistance of the sample volume and the total resistance of the contacts are close to each other and equal to about 5  108 ohms.

Language: Russian
Full text
Keywords: фотоэмиссияомический контактвысокоомный полупроводникphotoemissionhigh-resistivity semiconductoran ohmic contact

In book

XXIII Международная научно-техническая конференция по фотоэлектронике и приборам ночного видения 28-30 мая 2014, Москва, Россия
XXIII Международная научно-техническая конференция по фотоэлектронике и приборам ночного видения 28-30 мая 2014, Москва, Россия
М.: ОАО "НПО "Орион", 2014.
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